Display Substrate Via Overlap Structure for Stable Pixel Charging

The patent applies preliminary action by forming a protective film layer over the conductive region before the etching process. This protective film prevents the conductive region from being exposed to air during via hole formation, thereby avoiding anti-conduction issues. The protective film is removed only after the via hole is successfully formed, ensuring the conductive region remains protected throughout the critical etching operation.

The protective film acts as an intermediary element between the conductive region and the etching environment. It mediates the interaction by providing a barrier that prevents direct exposure of the conductive region to air and etching chemicals, thus eliminating the harmful anti-conduction effect while allowing the via hole to be formed through the protective film.

The protective film is applied in advance to oxide semiconductor-based conductive regions before any processing that might expose them. This preliminary protection enables the use of cost-effective oxide semiconductor technology while preventing the performance-degrading anti-conduction effect that would otherwise occur during subsequent manufacturing steps.

The patent converts the potential harm of air exposure (which causes anti-conduction) into a benefit by using the protective film to create a controlled environment. The protective film transforms the harmful interaction between air and exposed conductive regions into a beneficial protected state, allowing oxide semiconductor technology to deliver its cost advantages without suffering from its susceptibility to air exposure.