Display Window Salt Treatment Crack Removal
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Solution Overview
Problem
Flat panel displays face challenges in achieving both high strength and transmittance, particularly in withstanding external impacts and maintaining image clarity, due to surface cracks that degrade their mechanical and optical properties.
Innovation Solution
A method involving a salt treatment process on a mother substrate to form a silicon-rich layer with a specific silicon content ratio, followed by its removal, which enhances the strength and transmittance of the display window by removing surface cracks and ensuring a smooth surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a conventional glass substrate is used for display windows, then the manufacturing process is simple, but the surface cracks reduce impact resistance and strength
Solution Approach 1:
The patent applies preliminary action by performing salt treatment on the mother substrate before final processing to proactively remove surface cracks. The salt treatment process penetrates into the substrate surface and eliminates crack sources in advance, preventing future strength issues rather than addressing them after they manifest.
Solution Approach 2:
The patent replaces mechanical crack removal methods (such as polishing or grinding) with a chemical salt treatment process. The molten salt chemically interacts with the glass substrate to dissolve and remove cracked regions, providing a more precise and less damaging alternative to mechanical removal methods.
2Strength
If the silicon-rich layer is formed deeper to remove all cracks, then impact resistance improves, but transmittance decreases due to surface roughness
Solution Approach 1:
The patent applies parameter changes by precisely controlling the salt treatment temperature (400-600°C), treatment time (1-24 hours), and silicon content ratio (1.2-1.4) to achieve optimal crack removal while maintaining surface smoothness. By adjusting these parameters, the process removes cracks effectively without creating excessive surface roughness that would reduce transmittance.
Solution Approach 2:
The patent applies local quality by creating a silicon-rich layer with specific properties at the surface region while maintaining the bulk substrate properties. The silicon-rich layer formed at 100-500 nm depth provides crack-free strength enhancement locally without affecting the overall optical properties of the substrate, thus maintaining high transmittance.
3Illumination intensity
If the silicon-rich layer is completely removed, then transmittance improves, but surface smoothness may be compromised
Solution Approach 1:
The patent applies partial action by selectively removing the silicon-rich layer rather than completely eliminating it. The layer is removed to the extent necessary to eliminate surface irregularities and improve transmittance, while retaining sufficient silicon enrichment to maintain surface smoothness and the beneficial crack-free structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in a display window with improved impact resistance, maintaining high transmittance and surface smoothness, capable of withstanding significant external impacts without breaking and ensuring clear image transmission.
Implementation Method 1
performing a salt treatment on the mother substrate to form a silicon-rich layer in a surface of the mother substrate
Implementation Method 2
removing the silicon-rich layer, wherein removing the silicon-rich layer may include cleansing the silicon-rich layer using a basic solution
Data Source
AI summary
According to an exemplary embodiment of the present disclosure, a method of manufacturing a display window includes preparing a mother substrate, performing a salt treatment on the mother substrate to form a silicon-rich layer in a surface of the mother substrate to a first depth from the surface of the mother substrate, and removing the silicon-rich layer, wherein the first depth is greater than a depth of any cracks in the surface of the mother substrate, and a ratio of silicon content in the silicon-rich layer to a silicon content in the mother substrate is 1.2 to 1.4.


