Oxide Semiconductor Display Wiring With Titanium Barrier Layers
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Solution Overview
Problem
Display devices face challenges in achieving low resistance and high thermal stability for driving signal lines while maintaining easy processability, which affects display quality and resolution.
Innovation Solution
The implementation of a display device structure that includes a substrate with a corrosion prevention layer, a conductive layer made of aluminum or aluminum alloy, and a barrier layer of titanium, which helps in reducing signal delays and improving resolution by preventing corrosion and hydrogen diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If aluminum or aluminum alloy is used for conductive layers to achieve low resistance, then electrical conductivity is improved, but corrosion resistance deteriorates
Solution Approach 1:
The patent employs a multi-layer composite structure where aluminum or aluminum alloy conductive layers are combined with titanium barrier layers and corrosion prevention layers. This composite approach allows the aluminum layer to provide low electrical resistance while the titanium and corrosion prevention layers protect against oxidation and corrosion, thus achieving both electrical conductivity and corrosion resistance simultaneously
Solution Approach 2:
The titanium barrier layer serves as an intermediary between the aluminum conductive layer and the oxide semiconductor layer. This intermediate layer prevents direct contact and potential harmful interactions between aluminum and the semiconductor, while also providing corrosion protection to the aluminum layer, thereby improving reliability without compromising the ease of manufacturing the conductive structure
2Manufacturing precision
If driving signal lines are designed for high resolution display, then display quality is improved, but signal delays increase
Solution Approach 1:
The patent optimizes the physical and electrical parameters of the driving signal lines by using aluminum or aluminum alloy materials with low electrical resistance. This parameter change in material selection reduces signal delay while maintaining the high resolution display quality, as the low resistance allows faster signal transmission across the display panel
3Reliability
If barrier layers are added to prevent corrosion and hydrogen diffusion, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent integrates multiple functional layers (corrosion prevention layer, titanium barrier layer, aluminum conductive layer) into a unified composite structure that can be manufactured as a single integrated component. This composite design provides comprehensive protection against corrosion and hydrogen diffusion while maintaining relatively simple manufacturing processes, thus improving reliability without excessively increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances display quality by reducing signal delays and maintaining low resistance, thereby improving resolution and reliability of the display device.
Implementation Method 1
a barrier layer, which includes titanium, between the oxide semiconductor layer and the aluminum conductive layer
Implementation Method 2
a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy
Data Source
AI summary
A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.