High-Frequency High-Power Terminator Using Distributed Resistive Elements
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Solution Overview
Problem
Conventional high-frequency terminators face issues with broadband matching and reduced rated power as frequency increases, leading to inferior reflection coefficient characteristics and limited power handling capabilities in RF/microwave/millimeter-wave applications.
Innovation Solution
A high-frequency high-power terminator with a new structure featuring a thin film resistor in a distributed element form, combined with an impedance matching circuit and a wider transmission line width, to achieve broadband matching and increased rated power across a wide frequency range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a conventional lumped element terminator is used, then the structure is simple, but the reflection coefficient characteristics deteriorate at high frequencies due to parasitic elements
Solution Approach 1:
The patent divides the lumped element resistor into multiple distributed resistive elements arranged along a transmission line. This segmentation transforms the single-point impedance discontinuity into a distributed impedance profile, reducing the impact of parasitic inductance and capacitance at high frequencies while maintaining broadband matching characteristics.
Solution Approach 2:
The patent transitions from a lumped element model (zero-dimensional approximation) to a distributed element model along the transmission line dimension. By distributing the resistive elements spatially along the transmission line, the design achieves broadband impedance matching that accounts for high-frequency effects without requiring complex multi-layer or three-dimensional structures.
2Adaptability or versatility
If the frequency range is extended to high frequencies, then the applicability increases, but the rated power decreases due to increased parasitic element effects
Solution Approach 1:
The distributed arrangement of multiple resistive elements along the transmission line reduces current concentration and heat generation at any single point. This segmentation allows the terminator to handle higher power levels across extended frequency ranges by distributing thermal load while maintaining broadband matching characteristics.
Solution Approach 2:
The patent optimizes parameters including the number of resistive elements, their individual resistance values, spacing distances, and transmission line characteristics to achieve both high-frequency performance and high power handling capability. By carefully controlling these parameters, the design achieves hundreds of watts rated power across 1-180 GHz frequency range.
3Reliability
If a thin film resistor is used, then the parasitic inductance and capacitance are reduced, but the rated power is limited by heat dissipation capability
Solution Approach 1:
The patent divides the total resistance into multiple thin film resistor segments distributed along the transmission line. This segmentation reduces the power dissipation burden on each individual resistor while maintaining the overall impedance matching function, thereby increasing the total rated power capability beyond what a single thin film resistor could provide.
Solution Approach 2:
The patent combines multiple thin film resistors with the transmission line structure to create a distributed resistive network. This merging leverages the low parasitic characteristics of thin film resistors while using the transmission line geometry and multiple elements to distribute thermal load, achieving both low parasitics and high power handling.
4Power
If the transmission line width is increased, then the power handling capability is improved, but the impedance matching bandwidth may be affected
Solution Approach 1:
The patent employs different transmission line widths at different locations along the terminator structure. Wider sections are used in regions requiring higher power handling capability, while narrower sections are positioned where impedance transformation is needed. This local optimization of geometry allows simultaneous achievement of high power handling and broadband matching.
Solution Approach 2:
The transmission line width is dynamically adjusted along the length of the terminator to optimize both power handling and bandwidth. By varying the width profile, the design adapts the characteristic impedance distribution to achieve broadband matching while maintaining high power capability in critical regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides excellent reflection coefficient characteristics with a matched return loss of 20 dB or less from 1 to 180 GHz, and a rated power of hundreds of watts, significantly improving power handling and frequency range compared to conventional terminators.
Implementation Method 1
electromagnetic-wave energy applied to the high-frequency terminator is converted into heat energy
Implementation Method 2
the heat energy is cooled through a heat sink
Data Source
AI summary
A high-frequency high-power terminator is disclosed. Specifically, the high-frequency high-power terminator has a new structure which uses a resistive element in a distributed element form to achieve broadband matching and to have improved rated power.