Distributed SiC TVS for High-Temperature Lightning Protection

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Solution Overview

Problem

Current transient voltage suppression (TVS) systems are large, heavy, and limited to cool environments, making them inefficient for high-temperature applications and requiring centralized placement, which can lead to increased space and weight requirements in equipment like aircraft engines, and are not effective in distributed electronics systems.

Innovation Solution

Distributed TVS systems using silicon carbide (SiC) or other wide band gap semiconductor devices with low leakage current, capable of operating up to 300°C, integrated into wiring components and connectors to provide multiple paths to ground for effective transient voltage suppression, reducing the impact of voltage spikes and enabling placement closer to potential strike points.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional silicon-based TVS components are used, then transient voltage suppression is achieved, but the components are relatively large and heavy

Engineering Contradiction:
Improvetransient voltage suppression capabilityVSAvoidweight of TVS components
Core Design Contradiction:
ReliabilityVSWeight of moving object

Solution Approach 1:

The patent changes the fundamental material parameter from silicon to wide band gap semiconductors (GaN, SiC), which enables the same TVS function with dramatically reduced size and weight while maintaining or improving performance characteristics

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses composite material structures combining wide band gap semiconductor layers with appropriate doping profiles and geometric configurations to achieve enhanced TVS performance in a compact form factor

Inventive Principle:
Principle #40Composite materials

2Reliability

If traditional silicon-based TVS components are used, then transient voltage suppression is achieved, but they are limited to cool ambient environments (less than 125°C)

Engineering Contradiction:
Improvetransient voltage suppression capabilityVSAvoidoperating temperature range
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent fundamentally changes the material parameter from silicon to wide band gap semiconductors (GaN, SiC), which have inherently higher thermal stability and can operate reliably at temperatures exceeding 125°C, thus expanding the operating temperature range

Inventive Principle:
Principle #35Parameter changes

3Reliability

If centralized TVS systems are used at control systems, then voltage spike mitigation is achieved, but space and weight requirements increase

Engineering Contradiction:
Improvevoltage spike mitigationVSAvoidspace on circuit boards and in enclosures
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent segments the centralized TVS system into multiple distributed TVS components placed at various locations throughout the electrical system, which protects against voltage spikes locally while reducing the space and weight burden on any single component or enclosure

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention transitions from a centralized two-dimensional layout to a distributed three-dimensional arrangement of TVS components throughout the system, optimizing space utilization and reducing concentration of mass in any single location

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Reliability

If centralized TVS systems are used, then voltage spike mitigation is achieved, but voltage spikes must travel long distances before being sensed and mitigated

Engineering Contradiction:
Improvevoltage spike mitigationVSAvoidtime for voltage spike to travel to centralized system
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent divides the centralized TVS protection into multiple distributed TVS segments placed at strategic locations throughout the electrical system, which reduces the distance voltage spikes must travel before being detected and suppressed, thereby reducing response time

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The distributed TVS system reduces the severity and duration of voltage spikes, allows for more compact and lightweight electronics, and enhances reliability by dissipating energy away from sensitive components, improving thermal management and redundancy in harsh environments.

Implementation Method 1

Distributed TVS systems using silicon carbide (SiC) or other wide band gap semiconductor devices with low leakage current, capable of operating up to 300°C

Methodology Applied
Scientific EffectWide band gap semiconductor property:

Implementation Method 2

provide multiple paths to ground for effective transient voltage suppression, reducing the impact of voltage spikes

Methodology Applied
Scientific EffectTransient voltage suppression:

Data Source

PatentEP2645377B1Method and system for lightning protection with distributed transient voltage suppression
Publication Date: 2019.05.22 GENERAL ELECTRIC CO
  • EP2645377B1 patent drawingFigure 1
  • EP2645377B1 patent drawingFigure 2
  • EP2645377B1 patent drawingFigure 3

AI summary

A method of method of forming a wide band-gap semiconductor transient voltage suppressor (TVS) assembly (200) and a system for a transient voltage suppressor (TVS) assembly (200) are provided. The TVS assembly includes a connecting component (202) configured to electrically couple a first electrical component (204) to a second electrical component (206) located remotely from the first electrical component through one or more electrical conduits (208) and a transient voltage suppressor device (210) positioned within the connecting component and electrically coupled to the one or more electrical conduits wherein the TVS device includes a wide band-gap semiconductor material.