Novel Divalent Salt Acid Generator for Photoresist Resolution
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Solution Overview
Problem
Current chemically amplified positive resist compositions for semiconductor microfabrication using lithography processes face challenges in achieving optimal resolution and focus margin due to limitations in acid generators and photoresist formulations.
Innovation Solution
A novel salt with a divalent group represented by specific formulas is introduced, which forms the basis of an acid generator used in a photoresist composition that includes a resin with acid-labile groups, enhancing the composition's solubility in alkaline solutions and improving pattern formation during lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators are used in chemically amplified positive resist compositions, then the basic photoresist function is maintained, but the resolution and focus margin of photoresist patterns are insufficient
Solution Approach 1:
The invention changes the chemical parameters of the acid generator by introducing a novel salt structure with specific divalent groups (formula aa) and cyclic structures (formula a1). This structural modification alters the acid generation characteristics, enabling improved resolution and focus margin while maintaining reliability in advanced lithography processes
Solution Approach 2:
The invention creates a composite acid generator system combining the novel salt (with divalent group formula aa) and resin components (with acid-labile groups). This composite formulation synergistically improves pattern formation quality, achieving both enhanced resolution/focus margin and reliable performance consistency
2Manufacturing precision
If the photoresist composition is enhanced for better pattern formation, then the solubility in alkaline solutions improves, but the formulation complexity increases
Solution Approach 1:
The invention applies local quality by introducing specific functional groups (divalent group formula aa with —O— or —S— linkages) at targeted positions within the acid generator molecule. This localized structural enhancement improves solubility and pattern formation without requiring comprehensive reformulation of the entire photoresist system
Solution Approach 2:
The invention modifies specific chemical parameters of the acid generator (molecular structure, solubility characteristics) through the novel salt design, enabling improved pattern formation while maintaining formulation simplicity through targeted parameter optimization rather than systemic complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel salt and acid generator improve the resolution, line edge roughness, and focus margin of photoresist patterns, making the composition suitable for advanced lithography techniques such as ArF, KrF, and EUV lithography.
Implementation Method 1
a chemically amplified positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation
Implementation Method 2
a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid
Data Source
AI summary
A salt having a divalent group represented by the formula (aa):wherein Xa and Xb independently each represent —O— or —S—,Ra, Rb, Rc and Rd independently each represent a hydrogen atom, a C1-C4 alkyl group or a C1-C4 alkoxy group, andm represents 1 or 2.


