DLC Backside Coating for Electrostatic Chuck Damage Prevention
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Solution Overview
Problem
The increasing number of levels in Vertical-Not-AND (VNAND) products leads to substrate deformation during etching and thin-film deposition, causing yield decreases due to damage from electrostatic chucking forces, necessitating a solution to protect the substrate's back side during processing.
Innovation Solution
A diamond-like carbon (DLC) film deposition apparatus and method that deposits DLC films on the substrate's back side, using a holder to support the substrate while the electrostatic chuck fixes the substrate, preventing damage and improving yield by providing a hard, protective layer and precise support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the substrate is clamped onto an electrostatic chuck to prevent deformation during etching and thin-film deposition, then the substrate stability is improved, but the back side of the substrate may be damaged by the chucking force
Solution Approach 1:
A DLC film is deposited on the back side of the substrate before the substrate is clamped onto the electrostatic chuck. This preliminary protective layer prevents direct contact between the chuck and the substrate back side, thereby preventing damage while maintaining the stability provided by the electrostatic chucking force.
Solution Approach 2:
The DLC film acts as a cushioning layer between the electrostatic chuck and the substrate back side. This layer absorbs and distributes the chucking force, preventing concentrated stress that would cause damage to the substrate back side while still allowing the substrate to be securely held during processing.
2Adaptability or versatility
If the number of levels in VNAND products increases to improve storage capacity, then the product functionality is improved, but the likelihood of substrate deformation increases
Solution Approach 1:
The DLC film is deposited on the substrate back side before the substrate undergoes subsequent processing steps. This pre-deposited protective layer provides structural support and stress distribution that prevents deformation during etching and thin-film deposition processes associated with increased VNAND levels.
Solution Approach 2:
The substrate structure becomes a composite system consisting of the substrate material and the DLC protective film. This composite structure combines the functional properties of the substrate with the mechanical strength and stress resistance of the DLC film, enabling higher VNAND levels without deformation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The DLC film deposition method enhances substrate processing yield by preventing deformation and damage, ensuring proper support and protection during semiconductor manufacturing processes, maintaining substrate integrity and reducing defects.
Implementation Method 1
a DLC film generator below the holder, in the chamber, the DLC film generator configured to deposit a DLC film on the second surface of the mounted substrate
Implementation Method 2
the electrostatic chuck configured to support the second surface of the substrate
Data Source
AI summary
A DLC film deposition apparatus comprises a chamber in which processes are performed, a substrate in the chamber, the substrate having a first surface facing the top of the chamber, and a second surface opposite to the first surface, a holder in the chamber, the holder configured to support the substrate while being in contact with part of the second surface of the substrate, and a DLC film generator below the substrate, in the chamber, the DLC film generator configured to deposit a DLC film on the second surface of the substrate, wherein the DLC film is formed on the part of the second surface of the substrate that is not in contact with the holder.