Diamond-Like Carbon Hardmask Films for High-Selectivity Patterning
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Solution Overview
Problem
Conventional hardmask materials lack the desired etch selectivity and are difficult to deposit as critical dimensions in integrated circuit manufacturing decrease, leading to insufficient masking of underlying material layers during pattern transfer.
Innovation Solution
The deposition of high-density diamond-like carbon films using a hydrocarbon-containing gas mixture and plasma generation with specific RF bias frequencies and temperatures to form a carbon film with high sp3 hybridized atoms, which serves as an improved hardmask.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional hardmask materials are used, then the etching process can be performed, but the etch selectivity is insufficient and pattern resolution deteriorates
Solution Approach 1:
The patent changes the physical and chemical parameters of the hardmask material by using diamond-like carbon (DLC) with high sp3 hybridization content (≥60%), deposited at low substrate temperatures (−50°C to 100°C) to achieve both high etch selectivity and excellent pattern resolution that conventional materials cannot provide
Solution Approach 2:
The patent employs diamond-like carbon, a composite material with unique properties combining the hardness of diamond with amorphous structure, to create a hardmask layer that simultaneously provides superior etch resistance and pattern fidelity compared to conventional single-material hardmasks
2Productivity
If the substrate temperature is increased to improve deposition rate, then productivity increases, but the sp3 hybridized carbon content decreases and film quality deteriorates
Solution Approach 1:
The patent optimizes the substrate temperature parameter to a specific low range (−50°C to 100°C) that enables high sp3 hybridized carbon content (≥60%) in the DLC film while maintaining practical deposition rates, resolving the trade-off between film quality and productivity
3Productivity
If the RF power is increased to improve deposition rate, then productivity increases, but the film stress increases and film quality deteriorates
Solution Approach 1:
The patent carefully controls RF power within an optimized range that balances deposition rate with film stress management, ensuring that the DLC film maintains low stress and high sp3 content simultaneously, thereby achieving both high productivity and excellent film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diamond-like carbon film provides enhanced etch selectivity and robust film properties, enabling improved dimension and profile control of semiconductor structures, particularly in three-dimensional stacking applications.
Implementation Method 1
generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film
Implementation Method 2
techniques for deposition of high-density films for patterning applications
Data Source
AI summary
Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about −10° C. to about 20° C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.