DLTS Detection of Carbon and Heavy Metal Peaks in Silicon
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Solution Overview
Problem
Estimating the source of heavy metal contamination in silicon materials during manufacturing is challenging due to various possible causes, requiring considerable trial and error without clear indicators, which hinders the stable supply of high-quality silicon materials with low heavy metal contamination.
Innovation Solution
A method using Deep-Level Transient Spectroscopy (DLTS) to detect and differentiate between carbon and heavy metal contamination in silicon materials, identifying a carbon-containing sintered body as a contamination source when both carbon and heavy metal peaks are detected, and attributing contamination to other sources when only a heavy metal peak is present, allowing for targeted process maintenance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If trial and error method is used to estimate heavy metal contamination source, then various possibilities can be investigated, but estimation time and complexity increase significantly
Solution Approach 1:
The patent replaces the mechanical trial-and-error investigation method with DLTS (Deep-Level Transient Spectroscopy) measurement technology. By using DLTS to detect characteristic peaks of heavy metals and carbon in silicon materials, the system directly identifies contamination sources without requiring systematic trial and error, thereby significantly reducing estimation time while maintaining identification accuracy.
Solution Approach 2:
The patent introduces DLTS measurement as an intermediary detection method between the silicon material and the contamination source identification. The DLTS technique serves as a mediator that translates physical contamination (heavy metals and carbon) into detectable electrical signals (characteristic peaks), enabling indirect but accurate identification of contamination sources without direct physical investigation of manufacturing equipment.
2Measurement precision
If DLTS measurement is performed to detect carbon and heavy metal contamination, then contamination source can be identified, but measurement and detection complexity increases
Solution Approach 1:
The patent applies the principle of characteristic peak detection in DLTS spectra, where different contaminants (carbon and heavy metals) produce distinct spectral signatures analogous to color changes. By identifying specific peak positions and patterns in the DLTS measurement results, the system can precisely differentiate between carbon contamination and heavy metal contamination, achieving high measurement precision through spectral analysis.
3Reliability
If process maintenance work is performed frequently to eliminate contamination sources, then heavy metal contamination level decreases, but manufacturing time and cost increase
Solution Approach 1:
The patent implements preliminary detection of contamination sources using DLTS measurement on silicon materials before they proceed to subsequent manufacturing steps. By identifying contamination sources early through characteristic peak detection, the system enables targeted maintenance only when necessary, preventing unnecessary process interruptions and maintaining high manufacturing efficiency while ensuring product quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables effective estimation and reduction of heavy metal contamination by identifying and replacing or repairing carbon-containing sintered body members, ensuring stable production of high-quality silicon materials with reduced contamination.
Implementation Method 1
DLTS measurement has been performed on a silicon material
Data Source
AI summary
The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing DLTS measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a DLTS spectrum obtained by the DLTS measurement.