Dog Bone Junction Profile for ESD Diode Field Management

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Solution Overview

Problem

Conventional ESD diodes fail prematurely due to high electric fields at the junction corner, leading to inefficient current flow and thermal runaway, which degrades their performance in protecting integrated circuits from electrostatic discharge.

Innovation Solution

The implementation of a dog bone junction profile in ESD diodes, which reduces the electric field at the junction corner by distributing it more uniformly, thereby preventing premature failure and enhancing ESD performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional diode junction is used with sharp corners, then the manufacturing process is simple, but the electric field concentrates at the junction corner causing premature failure

Engineering Contradiction:
ImproveESD diode reliabilityVSAvoidjunction profile complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies curvature by replacing sharp junction corners with rounded profiles. The dog-bone junction profile specifically rounds the corners where electric field concentration occurs, eliminating the acute angles that cause field enhancement. This curvature modification redistributes the electric field uniformly across the junction, preventing premature breakdown while maintaining manufacturing feasibility through standard fabrication processes.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The patent implements local quality by modifying only the critical junction corner regions while leaving the rest of the diode structure unchanged. The dog-bone profile selectively rounds corners and adjusts doping concentrations locally at the junction periphery, rather than redesigning the entire device. This localized modification targets the specific problem area (junction corners) without increasing overall device complexity.

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If the junction corner has high curvature, then the manufacturing is easier, but the electric field intensity increases causing thermal runaway

Engineering Contradiction:
Improvejunction formation easeVSAvoidjunction temperature
Core Design Contradiction:
Ease of manufactureVSTemperature

Solution Approach 1:

The patent applies curvature by replacing sharp junction corners with rounded profiles. The dog-bone junction profile specifically rounds the corners where electric field concentration occurs, eliminating the acute angles that cause field enhancement. This curvature modification redistributes the electric field uniformly across the junction, preventing premature breakdown while maintaining manufacturing feasibility through standard fabrication processes.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Productivity

If conventional junction profile is used, then the device structure is simple, but current flow is non-uniform causing inefficient ESD protection

Engineering Contradiction:
ImproveESD protection efficiencyVSAvoidjunction profile complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent implements local quality by modifying only the critical junction corner regions while leaving the rest of the diode structure unchanged. The dog-bone profile selectively rounds corners and adjusts doping concentrations locally at the junction periphery, rather than redesigning the entire device. This localized modification targets the specific problem area (junction corners) without increasing overall device complexity.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dog bone junction profile effectively reduces the peak electric field and current density at the junction corner, leading to improved ESD performance, with reduced junction capacitance and lower peak temperatures, thus protecting integrated circuits from electrostatic discharge without sacrificing surge protection capabilities.

Implementation Method 1

A diode has a junction with junction corners or a silicon/oxide interface or an interface with a junction having carrier depletion in some other materials system. A diode conducts well in one direction of electric current flow and poorly or negligibly in an opposite direction.

Methodology Applied
Scientific EffectDiode junction: Diode

Implementation Method 2

ESD protection for integrated circuits is vital to protect them from degradation and damage due to contact with manufacturing machines, personnel, and users and/or with any objects that can convey static electricity into the integrated circuits. A sudden spark or surge of static electricity into an integrated circuit is called a strike event.

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Implementation Method 3

a layer that overlies a portion of the doped area and has a doping of an opposite second type of conductivity that is opposite from the first conductivity type of the doped area, and the layer having a corner in cross-section, and the doping of the doped area forming a junction beneath the layer with the doping of the doped area diluted in a vicinity below the corner of the layer.

Methodology Applied
Scientific EffectDoping: Dopants

Data Source

PatentUS9105567B2Making ESD diode with P-S/D overlying N-well and P-EPI portion
Publication Date: 2015.08.11 TEXAS INSTRUMENTS INC
  • US9105567B2 patent drawing
  • US9105567B2 patent drawing
  • US9105567B2 patent drawing

AI summary

An integrated circuit structure includes a semiconductor doped area (NWell) having a first conductivity type, and a layer (PSD) that overlies a portion of said doped area (NWell) and has a doping of an opposite second type of conductivity that is opposite from the first conductivity type of said doped area (NWell), and said layer (PSD) having a corner in cross-section, and the doping of said doped area (NWell) forming a junction beneath said layer (PSD) with the doping of said doped area (NWell) diluted in a vicinity below the corner of said layer (PSD). Other integrated circuits, substructures, devices, processes of manufacturing, and processes of testing are also disclosed.