Doherty Amplifier Combining Load Matching for Gain-Efficiency Balance

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Solution Overview

Problem

Conventional Doherty power amplifiers face challenges in achieving balanced performance between symmetric and asymmetric configurations, with symmetric amplifiers offering better gain and RF bandwidth but poorer efficiency, while asymmetric amplifiers have better back-off efficiency but poorer linearity and gain.

Innovation Solution

The design incorporates symmetric or slightly asymmetric carrier and peaking power amplifier devices coupled with a complex combining load matching circuit, which reduces parasitic effects and simplifies impedance matching, enabling higher gain and more linearizable power added efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a symmetric Doherty amplifier configuration is used, then gain and RF bandwidth are improved, but back-off efficiency deteriorates

Engineering Contradiction:
ImprovegainVSAvoidback-off efficiency
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies asymmetry by introducing a complex combining load with unequal resistance values (R1 and R2) instead of using equal resistances in a symmetric configuration. This asymmetric load distribution enables the amplifier to achieve better back-off efficiency while maintaining good gain and bandwidth characteristics, effectively resolving the contradiction between symmetric configuration benefits and efficiency limitations.

Inventive Principle:
Principle #4Asymmetry

2Use of energy by moving object

If an asymmetric Doherty amplifier configuration is used, then back-off efficiency is improved, but linearity and gain deteriorate

Engineering Contradiction:
Improveback-off efficiencyVSAvoidlinearity
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent employs parameter changes by carefully selecting and optimizing the resistance values (R1 and R2) of the asymmetric load, along with adjusting impedance transformation ratios and component values in the matching networks. These parameter optimizations enable the asymmetric configuration to achieve improved back-off efficiency while maintaining acceptable linearity and gain performance.

Inventive Principle:
Principle #35Parameter changes

3Object-affected harmful factors

If a complex combining load matching circuit is used, then parasitic effects are reduced and impedance matching is simplified, but device complexity increases

Engineering Contradiction:
Improveparasitic effectsVSAvoidcircuit complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent merges the impedance matching function with the load modulation function by integrating the matching networks directly into the output circuits of the carrier and peaking amplifiers. This consolidation achieves parasitic effect reduction and impedance matching simplification while avoiding the need for separate, additional matching components, thereby limiting the increase in overall device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentEP3817223B1Doherty amplifier with complex combining load matching circuit
Publication Date: 2024.12.11 NXP USA INC
  • EP3817223B1 patent drawingFigure 1
  • EP3817223B1 patent drawingFigure 2
  • EP3817223B1 patent drawingFigure 3

AI summary

A Doherty power amplifier includes input circuitry that provides input signals to carrier and peaking amplifiers with an input phase offset between 20 degrees and 160 degrees. Carrier and peaking amplifier output signals are combined at a combining node. A complex combining load matching circuit, which is connected to the combining node, consists of two, series-connected transmission line segments. The matching circuit provides a complex impedance, ZL, with a non-zero reactive portion, xn. The output circuit between the peaking amplifier and the combining node has an electrical length of 0 or n∗180 degrees (n = an integer value). The output circuit between the carrier amplifier and the combining node has an electrical length, θx, equal to an absolute value of the input phase offset when the electrical length of the peaking output circuit is 0 degrees.