Dolan Bridge Junction Deposition With Constant-Angle Wafer Scanning
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Solution Overview
Problem
Current fabrication techniques for Dolan bridge Josephson junction devices are inadequate for full wafer production due to insufficient uniformity in processing, leading to variations in image size and junction dielectric, which can alter the device's frequency and introduce defects, shortening coherence time.
Innovation Solution
A deposition system with a scanning stage and proximity mask that maintains a constant angle of deposition across a wafer, preventing misaligned deposition source material from contacting the wafer, and a cluster tool that includes this system along with a dielectric source for forming uniform features without breaking vacuum.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If non-manufacturing equipment is used for fabrication, then small pieces of wafers can be handled, but full wafer production is not enabled
Solution Approach 1:
The system employs a dynamic scanning stage that moves the wafer through the deposition chamber while maintaining a constant angle between the deposition source and wafer surface. This dynamic approach allows full wafer processing while preserving the uniformity characteristics of point-source deposition by continuously adjusting the wafer position relative to the source.
Solution Approach 2:
A proximity mask with a precisely positioned slit is introduced as an intermediary element between the deposition source and the wafer. This mask defines and maintains a constant deposition angle, acting as a geometric mediator that ensures uniform material deposition across the entire wafer surface while enabling full wafer processing.
2Productivity
If conventional deposition is used, then deposition can be performed, but image size variation occurs due to inconsistent angle of evaporation
Solution Approach 1:
The system incorporates a controller that monitors and adjusts the wafer position on the scanning stage to maintain a constant deposition angle. This feedback mechanism ensures that the angle between the deposition source and wafer surface remains consistent throughout the deposition process, preventing image size variation while maintaining productivity.
Solution Approach 2:
The scanning stage dynamically adjusts the wafer position during deposition to maintain a constant angle of evaporation. By continuously moving the wafer through the deposition chamber in a controlled manner, the system preserves uniform image formation while enabling full wafer processing at productive rates.
3Ease of manufacture
If process controls are insufficient, then fabrication can proceed, but junction dielectric variation occurs
Solution Approach 1:
The proximity mask with its precisely engineered slit serves as a passive control element that geometrically defines the deposition angle without requiring active feedback or complex control systems. This intermediary structure ensures uniform junction dielectric formation through its fixed geometric relationship to the deposition source, maintaining precision while preserving ease of manufacture.
4Device complexity
If deposition angle is not controlled, then deposition is simple, but defects are introduced into the junction dielectric
Solution Approach 1:
The proximity mask acts as a simple geometric intermediary that passively controls the deposition angle through its slit geometry. This approach introduces minimal system complexity while effectively preventing defects in the junction dielectric by ensuring consistent angular deposition, thereby protecting device reliability and coherence time without requiring complex active control systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables uniform feature formation across the entire wafer surface, ensuring consistent image formation tolerances suitable for quantum chip manufacturing and extending device coherence time by maintaining precise control over deposition angles and dielectric layers.
Implementation Method 1
The deposition system provides chemical deposition uniformity capable of full wafer production, enabling a series of uniform features to be formed across the surface of a wafer
Implementation Method 2
In operation, the proximity mask prevents deposition source material having a trajectory that is out of alignment with the slit from contacting the wafer
Data Source
AI summary
A deposition system includes a deposition source and a scanning stage disposed within a deposition path of the deposition source. The scanning stage includes a support platform configured to support a wafer thereon, and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform with respect to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scanning stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scanning stage, the controller configured to control the mechanical actuator to translate the wafer with respect to the slit such that an angle of deposition remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is out of alignment with the slit from contacting the wafer.