Domain Wall Element Stack for Consistent Neuromorphic Control
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Solution Overview
Problem
Integrated magnetoresistance effect elements often exhibit performance deviations, which reduce the controllability of integrated devices.
Innovation Solution
The integration of a laminated structure with two distinct groups of domain wall movement elements, where the second element group has a lower critical current density, higher domain wall moving speed, and specific material and structural differences compared to the first element group, including different materials, thicknesses, and orientations, to minimize performance deviations and enhance controllability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If magnetoresistance effect elements are integrated, then device functionality is improved, but performance deviations between elements increase
Solution Approach 1:
The patent applies local quality by creating two distinct element groups with different critical current densities. The first element group has a first critical current density while the second element group has a second critical current density that is lower than the first. This local differentiation allows each group to be optimized for specific functions while maintaining overall device reliability through controlled performance variation.
Solution Approach 2:
The patent implements parameter changes by systematically varying the critical current density parameter between the two element groups. By adjusting this key parameter, the patent achieves both improved device functionality through diverse operational characteristics and maintained reliability through controlled performance distribution across the integrated structure.
2Device complexity
If element performance varies, then device complexity increases, but controllability decreases
Solution Approach 1:
By dividing the integrated device into two element groups with locally differentiated critical current densities, the patent manages complexity through structured heterogeneity. Each group maintains uniform characteristics within itself, enabling independent control while the overall device benefits from the diversity of having two distinct groups with different operational parameters.
Solution Approach 2:
The patent segments the integrated device into two distinct element groups based on critical current density characteristics. This segmentation allows for independent control of each group, improving overall controllability despite the presence of performance variations. The first group operates at a higher critical current density while the second group operates at a lower critical current density, enabling differentiated control strategies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces performance deviations between magnetoresistance effect elements, resulting in superior controllability and improved operation of integrated devices, particularly in neuromorphic applications.
Implementation Method 1
a domain wall movement layer 10, a non-magnetic layer 30, and a ferromagnetic layer 20
Data Source
AI summary
According to an embodiment, there is provided an integrated device including: a substrate; and a laminated structure stacked on the substrate, in which the laminated structure includes a first element group and a second element group disposed at a position farther from the substrate than the first element group, each of the first element group and the second element group includes a plurality of domain wall movement elements, each of the plurality of domain wall movement elements includes a domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the domain wall movement layer and the ferromagnetic layer, and each of the domain wall movement elements belonging to the second element group has a lower critical current density required for moving a domain wall of the domain wall movement layer than each of the domain wall movement elements belonging to the first element group.