Dopant Group-Substituted Cyclo(silane Precursors for Uniform Semiconductor Films

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Solution Overview

Problem

Current methods for forming semiconducting thin films from liquid silicon precursors face challenges in doping and reproducibility, resulting in disappointing film properties and unreliable commercial-scale production.

Innovation Solution

Development of hetero-substituted (cyclo)silane compounds of the formula (AnHz)m(DR13−m)q, where n is from 3 to 12, m is from 1 to 3, and D is Sb, As, or B, which are synthesized by reacting (cyclo)silanes with dopant group precursors and purified, then formulated into ink compositions for printing or spin-coating, followed by curing and annealing to produce doped semiconductor films.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If dopant atoms are covalently bound to silicon atoms in liquid (cyclo)silanes, then doping capability is improved, but film properties and reproducibility deteriorate

Engineering Contradiction:
Improvedoping capabilityVSAvoidfilm properties and reproducibility
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The invention separates the dopant atom D from the cyclic silane ring structure, placing the dopant in an exocyclic position. This segmentation allows the dopant to be introduced while maintaining the integrity of the cyclic silane core, thereby improving film properties and reproducibility while retaining doping capability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dopant atom is positioned at a specific local site (exocyclic position) rather than being integrated into the ring structure. This local substitution approach allows precise control over dopant placement and concentration, improving both film quality and reproducibility while maintaining doping functionality.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If dopant atoms are introduced into liquid silicon precursors, then semiconducting function is improved, but manufacturing reliability deteriorates

Engineering Contradiction:
Improvesemiconducting functionVSAvoidmanufacturing reliability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The dopant atom is pre-introduced into the liquid silicon precursor molecule in a controlled exocyclic position, allowing the precursor to be stored and handled in liquid form with known dopant content. This preliminary doping action enables reliable manufacturing by eliminating the need for post-deposition doping steps and ensuring consistent dopant distribution.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention changes the structural parameter of dopant positioning from endocyclic (within the ring) to exocyclic (outside the ring). This parameter change improves manufacturing reliability by simplifying the synthesis and processing steps while maintaining the semiconducting function through preserved dopant-silicon bonding.

Inventive Principle:
Principle #35Parameter changes

3Stability of the object's composition

If covalent bonds between dopant and silicon are preserved through synthesis steps, then dopant stability is improved, but processing complexity increases

Engineering Contradiction:
Improvedopant stabilityVSAvoidprocessing complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The invention extracts the dopant atom from the cyclic ring structure and places it in an exocyclic position. This extraction simplifies the molecular structure, making the compound more stable and easier to process while maintaining the covalent bond between dopant and silicon. The simplified structure reduces processing complexity while preserving dopant stability.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach enables the production of commercial-quality doped semiconductor films with uniform dopant distribution, improving film properties and reproducibility, suitable for high-volume commercial use.

Implementation Method 1

covalently binding dopant atoms such as phosphorous and boron to silicon atoms

Methodology Applied
Scientific EffectCovalent bonding: Chemical Bonding

Implementation Method 2

spin-coating

Methodology Applied
Scientific EffectSpin coating: Spin Coating

Implementation Method 3

printing

Methodology Applied
Scientific EffectPrinting deposition: Deposition (physical)

Implementation Method 4

annealing

Methodology Applied
Scientific EffectAnnealing: Annealing

Implementation Method 5

curing

Methodology Applied
Scientific EffectCuring: Heat Treatment

Data Source

PatentUS7674926B1Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
Publication Date: 2010.03.09 ENSURGE MICROPOWER ASA
  • US7674926B1 patent drawing
  • US7674926B1 patent drawing
  • US7674926B1 patent drawing

AI summary

Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.