Dopant-Substituted Cyclosilane Precursors for Semiconductor Films
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Solution Overview
Problem
Existing methods for forming semiconducting thin films from liquid silicon precursors face challenges in doping and reproducibility, resulting in disappointing film properties and unreliable commercial-scale production.
Innovation Solution
Development of hetero-substituted (cyclo)silane compounds of the formula (AnHz)m(DR13−m)q, where A is Si or Ge, and D is B, P, As, or Sb, which are synthesized by reacting (cyclo)silanes with dopant group precursors and purified, then formulated into ink compositions for printing or spin-coating, followed by curing and annealing to produce doped semiconductor films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dopant atoms are covalently bound to silicon atoms in liquid (cyclo)silanes, then doping is achieved, but film properties are disappointing and reproducibility is poor
Solution Approach 1:
The patent changes the chemical structure parameters of the dopant groups by introducing specific substituents (R1, R2, R3) with different sizes and properties. This allows optimization of the dopant-silicon bond stability and reactivity, leading to improved film properties and reproducibility while maintaining the liquid precursor advantage
Solution Approach 2:
The patent creates composite dopant groups combining multiple elements (D, R1, R2, R3) with specific properties. These composite structures provide both the necessary doping functionality and improved chemical stability, resolving the contradiction between achieving doping and maintaining good film properties
2Ease of operation
If liquid silanes are used as precursors, then handling and deposition are facilitated, but forming commercial quality semiconducting films is challenging
Solution Approach 1:
The patent performs preliminary doping of the liquid silane precursor before film formation. By covalently binding dopant atoms to silicon atoms in the liquid precursor, the doping is established beforehand, allowing the subsequent film formation process to directly yield doped semiconductor films with commercial quality without requiring complex post-processing
3Productivity
If dopant atoms are activated after film formation, then doping function is achieved, but the process is unreliable for high-volume production
Solution Approach 1:
The patent performs the doping action preliminarily during the synthesis of the liquid precursor itself, rather than after film formation. This preliminary doping ensures that the dopant atoms are already in place and properly bonded before film deposition, making the overall process reliable and suitable for high-volume commercial production
Solution Approach 2:
The liquid silane precursor with covalently bound dopant atoms serves itself by directly forming the doped semiconductor film without requiring separate doping and activation steps. This self-contained approach eliminates multiple process stages, improving both productivity and reliability for commercial-scale production
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach enables the production of commercial-quality doped semiconductor films with uniform dopant distribution, improving reproducibility and film properties, suitable for high-volume commercial use.
Implementation Method 1
Methods have been proposed for covalently binding dopant atoms such as phosphorous and boron to silicon atoms in certain liquid (cyclo)silanes
Implementation Method 2
The compounds and compositions are generally useful for making (e.g., by printing or spin-coating, then curing and/or annealing) doped semiconductor thin films
Implementation Method 3
by printing or spin-coating, then curing and/or annealing) doped semiconductor thin films
Data Source
AI summary
Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.