Doped Active Layer for Light Emitting Display
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Active current-driven light emitting displays, such as organic and inorganic light emitting devices, suffer from deteriorated response characteristics due to high series resistance in the channel region, which impairs the performance of the display.
Innovation Solution
The light emitting display incorporates a doped active layer with N-type and P-type dopant ions, creating a doping region between the source and drain electrodes, which reduces series resistance and enhances current mobility by forming a channel in the P-type doping region, allowing increased current density and improved response speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the active layer is formed on amorphous silicon or poly silicon without additional doping regions, then the device structure is simpler, but the series resistance is high and response characteristic deteriorates
Solution Approach 1:
The patent applies local quality by creating a P-type doping region specifically in the channel area of the active layer, while keeping other regions with different doping characteristics. This localized doping approach reduces series resistance in the critical channel region without requiring complete restructuring of the entire device, thus improving response characteristic while maintaining reasonable structural simplicity.
Solution Approach 2:
The patent changes the electrical parameters of the active layer by introducing P-type dopant ions in the channel region. This parameter change (adding dopant concentration) directly reduces the series resistance and improves charge carrier mobility, thereby enhancing the response characteristic of the light emitting display without fundamentally altering the device architecture.
2Ease of manufacture
If the active layer uses amorphous silicon or poly silicon, then the manufacturing process is simpler, but the channel region has relatively high resistance reducing current mobility
Solution Approach 1:
The patent maintains the simple amorphous silicon or poly silicon structure for the overall active layer (preserving ease of manufacture) while applying local quality enhancement by doping only the channel region with P-type ions. This selective approach improves current mobility where it matters most without complicating the overall manufacturing process.
Solution Approach 2:
The patent changes the electrical parameters (resistance and mobility) of the channel region through P-type doping, while keeping the base material (amorphous or poly silicon) unchanged. This parameter modification approach improves current mobility without requiring a change in the fundamental manufacturing process or base material system.
3Ease of operation
If voltage is applied to the gate electrode to form a channel, then the device can operate, but the series resistance of R1+R2+R3 reduces current density and response speed
Solution Approach 1:
The patent changes the resistance parameter (R1) of the channel region through P-type doping, which directly addresses the series resistance issue. By reducing the resistance in the gate-controlled channel region, the patent improves current density and response speed while maintaining the normal gate-driven operation mode of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped structure significantly reduces series resistance, increases current density, and enhances the response speed of the light emitting display by improving charge accumulation and mobility, thereby addressing the performance degradation issues.
Implementation Method 1
The active layer is disposed on the gate insulating layer and is doped with first dopant ions. The doping region comprises a predetermined portion of the active layer exposed between the source and drain electrodes. The predetermined portion is doped with second dopant ions.
Data Source
AI summary
The present disclosure provides a light emitting display device including a first substrate and a second substrate and a light emitting part disposed therebetween. The first substrate includes an active layer, source and drain electrodes, an insulating layer, and a gate electrode. The active layer is doped with first dopant ions and second dopant ions. The light emitting display may have a fast response characteristic due to a reduced resistance of the active layer and an improved characteristic of current drift.