Doped Carbon Dot Composite Materials for High-Temperature Stability

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Solution Overview

Problem

Semiconductor materials exhibit poor high-temperature resistance and require improvements in conductivity, heat dissipation, and defect passivation.

Innovation Solution

A composite material comprising a host material with semiconductor material and a modification material of doped carbon dots, which includes alkali metals, alkaline earth metals, IIB group elements, and VIA group elements, enhancing electrical conductivity, thermal conductivity, and defect passivation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If semiconductor material is used, then electrical conductivity is achieved, but high-temperature resistance is poor

Engineering Contradiction:

Improvehigh-temperature resistanceVSAvoidthermal stability

Core Design Contradiction:

ReliabilityVSTemperature

Solution Approach 1:

The patent combines semiconductor particles with carbon dots to form a composite material. The carbon dots component provides excellent thermal stability and high-temperature resistance, while the semiconductor particles maintain electrical conductivity. This composite structure resolves the contradiction by integrating materials with complementary properties.

Inventive Principle:

Principle #40Composite materials

2Reliability

If semiconductor material is used, then electrical conductivity is achieved, but defect passivation is insufficient

Engineering Contradiction:

Improvedefect passivationVSAvoidmaterial purity

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

Carbon dots act as an intermediary substance between semiconductor particles and the surrounding environment. They effectively passivate surface defects on semiconductor particles through their unique surface chemistry, reducing non-radiative recombination centers while maintaining the overall material purity and electrical properties.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Loss of energy

If semiconductor material is used, then electrical conductivity is achieved, but heat dissipation is poor

Engineering Contradiction:

Improveheat dissipationVSAvoidelectrical conductivity

Core Design Contradiction:

Loss of energyVSUse of energy by moving object

Solution Approach 1:

The patent merges semiconductor particles with carbon dots in a composite structure where both components work synergistically. The carbon dots provide efficient heat dissipation pathways through their high thermal conductivity, while the semiconductor particles maintain electrical conductivity, achieving both energy dissipation and electrical function simultaneously.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composite material improves carrier mobility, heat dissipation, and high-temperature stability, stabilizing voltage and reducing voltage increase in photoelectric devices.

Implementation Method 1

the modification material includes doped carbon dots

Methodology Applied

Scientific EffectDoping: Dopants

Implementation Method 2

enhancing electrical conductivity, thermal conductivity, and defect passivation

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250338766A1Composite material and photoelectric device

Publication Date: 2025.10.30 TCL TECHNOLOGY GROUP CORPORATION

AI summary

The present disclosure discloses composite material and photoelectric device. The composite material includes a host material and a modification material, wherein the host material includes semiconductor material and the modification material includes doped carbon dots. The composite material provided by the present disclosure has good performance.