Doped Graphene Electronic Materials for Semiconducting Junctions

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing electronic devices lack the ability to efficiently create regions with distinct electronic properties on a graphene substrate, limiting their functionality in forming semiconducting junctions and optoelectronic components.

Innovation Solution

The creation of defined regions on a graphene substrate with different electronic properties through chemical functionalization using various dopant species, which can form semiconducting or optoelectronic junctions and components such as diodes, transistors, and sensors by varying the dopant species, concentration, and attachment patterns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If chemical functionalization with dopant species is applied to graphene substrate, then regions with distinct electronic properties can be created, but the manufacturing complexity increases

Engineering Contradiction:

Improveelectronic property differentiationVSAvoidfunctionalization process complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by creating distinct doped regions (n-type and p-type) with different electronic properties on the graphene substrate. Each region is selectively functionalized with specific dopant species to achieve desired electronic characteristics in localized areas, enabling formation of semiconducting junctions and electronic devices with spatially varying properties.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The graphene substrate is segmented into multiple defined regions with different dopant species, concentrations, and attachment patterns. This segmentation allows independent control of electronic properties in each region, facilitating creation of complex electronic structures such as diodes, transistors, and sensors on a single substrate.

Inventive Principle:

Principle #1Segmentation

2Adaptability or versatility

If multiple dopant species are used to create distinct electronic regions, then functionality for semiconducting junctions is improved, but the manufacturing precision requirements increase

Engineering Contradiction:

Improvesemiconducting junction formationVSAvoiddopant region definition accuracy

Core Design Contradiction:

Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent utilizes parameter changes by varying dopant species type, concentration, and attachment patterns to control electronic properties. By adjusting these parameters across different regions, the invention achieves precise control over Fermi level, carrier density, and conductivity type, enabling formation of well-defined semiconducting junctions with controlled electrical characteristics.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the fabrication of advanced electronic and optoelectronic devices with tailored properties, enhancing their performance and functionality by forming regions with specific electronic or electro-optical characteristics.

Implementation Method 1

The first defined region is chemically functionalized with a first dopant species and the second defined region is chemically functionalized with a second dopant species

Methodology Applied

Scientific EffectChemisorption: Chemisorption

Data Source

PatentUS8927969B2Doped graphene electronic materials

Publication Date: 2015.01.06 ENTERPRISE SCIENCE FUND LLC

AI summary

A graphene substrate is doped with one or more functional groups to form an electronic device.