Doped Graphene Work Function Control via Chemical Treatment

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Solution Overview

Problem

Existing graphene-based technologies face challenges in controlling the work function and separating single-wall carbon nanotubes to achieve desired metallic or semiconducting characteristics, which limits their application in devices like display devices and solar cells.

Innovation Solution

Doping graphene with organic and inorganic dopants such as NO2BF4, HPtCl4, and nicotinamide compounds to control its work function, enabling the creation of p-doped or n-doped graphene for use in electrodes, display devices, and solar cells, while also providing a stable and efficient doping state.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If single-wall carbon nanotubes are separated to obtain desired metallic or semiconducting characteristics, then the electrical characteristics are improved, but the manufacturing complexity and difficulty increase significantly

Engineering Contradiction:
Improveelectrical characteristicsVSAvoidseparation process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts only the graphene sheets from the carbon nanotube structure, discarding the need to separate individual nanotubes. By exfoliating carbon nanotubes into graphene sheets, the invention obtains a material with uniform electrical characteristics suitable for transparent electrodes, avoiding the complex separation process while maintaining reliable electrical performance.

Inventive Principle:
Principle #2Taking out (Extraction)

2Ease of manufacture

If graphene sheets are used directly without doping, then the manufacturing cost is low, but the work function cannot be controlled for specific device applications

Engineering Contradiction:
Improvemanufacturing costVSAvoidwork function control
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent changes the chemical composition parameter of graphene by introducing dopants (such as nitric acid, sulfuric acid, or other chemical substances). This doping process modifies the work function of graphene from its intrinsic value to controllable values ranging from 3.5 eV to 4.5 eV, enabling adaptation to different device requirements while maintaining a relatively simple and low-cost manufacturing process.

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If graphene is doped to control work function, then the adaptability for different devices is improved, but the manufacturing process complexity increases

Engineering Contradiction:
Improvework function controlVSAvoiddoping process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent employs simple, inexpensive dopants such as nitric acid, sulfuric acid, or other common chemical substances that can be easily applied and then removed or left as residues. The doping process uses straightforward methods like dip-coating, spray-coating, or vapor phase treatment, avoiding complex equipment or multi-step procedures. The dopants serve their purpose of adjusting work function and can be disposed of or integrated into the final device structure.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The controlled work function of doped graphene enhances its electrical characteristics, allowing for the development of transparent and flexible electrodes with improved stability and performance in various devices, including OLEDs, LCDs, and solar cells.

Implementation Method 1

Doping graphene with organic and inorganic dopants such as NO2BF4, HPtCl4, and nicotinamide compounds to control its work function

Methodology Applied
Scientific EffectDoping: Dopants

Data Source

PatentUS9887020B2Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene
Publication Date: 2018.02.06 SAMSUNG ELECTRONICS CO LTD
  • US9887020B2 patent drawing
  • US9887020B2 patent drawing
  • US9887020B2 patent drawing

AI summary

A composition including graphene; and at least one dopant selected from the group consisting of an organic dopant and an inorganic dopant.