Doped HZO Layer for Linear MIM Capacitor CV Characteristics
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Next-generation Metal-Insulator-Metal capacitors (MIM CAPS) using Hafnium Zirconium Oxide (HZO) layers face challenges with non-linear Capacitance Voltage (CV) characteristics and a peak dielectric constant value at 0V, making integration into devices difficult.
Innovation Solution
A method for forming a doped HZO layer by alternating pulses of hafnium, zirconium, oxygen, and dopant precursors in a reaction chamber, where the dopant precursor includes elements with three or four valence electrons and a smaller atomic radius than Hf or Zr, to achieve a linear CV characteristic and a high dielectric constant value above 40.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a ferroelectric/antiferroelectric HZO layer is used to achieve high dielectric constant value above 40, then the capacitance density increases, but the CV characteristic becomes non-linear with a peak at 0V
Solution Approach 1:
The patent changes the chemical composition parameters of the HZO layer by introducing dopant elements (such as Si, Ge, Al) with specific atomic radii and valence electron configurations. This compositional modification transforms the material's electrical characteristics, shifting the CV curve from non-linear with 0V peak to linear characteristics, while preserving the high dielectric constant property
Solution Approach 2:
The patent creates a composite material system by doping HZO with foreign elements (Si, Ge, Al, etc.). The dopant atoms integrate into the HZO crystal lattice, forming a composite structure that combines the high dielectric constant of HZO with the linearizing effect of the dopant elements, achieving both high capacitance density and linear CV characteristics
2Quantity of substance
If a high dielectric constant material is used to increase capacitance, then the charge capacity increases, but the integration difficulty into devices increases due to non-linear CV characteristic
Solution Approach 1:
By modifying the compositional parameters of the dielectric material through doping, the patent achieves linear CV characteristics that are compatible with standard device integration requirements, while maintaining the high charge capacity enabled by the high dielectric constant
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped HZO layer achieves a linear CV characteristic and a high dielectric constant value above 35 at specific voltage ranges, enhancing the integration of HZO layers into devices while maintaining low leakage.
Implementation Method 1
A method for forming a doped HZO layer by alternating pulses of hafnium, zirconium, oxygen, and dopant precursors in a reaction chamber
Implementation Method 2
Capacitors are electronic components that are used to store and regulate electrical energy in an electrical field by accumulating electric charges on two closely spaced surfaces which are insulated from each other
Data Source
AI summary
The technology of the present disclosure generally relates to the field of capacitor devices. More particularly to Metal-Insulator-Metal capacitors (MIM CAPS) comprising a Hafnium Zirconium Oxide (HZO) layer, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the doped HZO layer on a substrate, comprises the steps of providing a substrate in a reaction chamber; executing one or more cycles whereby each cycle comprising contacting a hafnium precursor, a zirconium precursor, an oxygen reactant and a dopant precursor on at least part of the substrate by introducing the precursors and reactant in the reaction chamber; the dopant precursor comprises a dopant element having three or four valence electrons and an atomic radius which is less than the atomic radius of an Hf or Zr element of the HZO layer.