Semiconductor Mask Patterning With Doped Anti-Etch Mandrel Regions
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Solution Overview
Problem
As semiconductor technology advances towards smaller process nodes, the challenge lies in achieving a precise match between the pattern formed on a wafer and the target pattern, with increasing complexity and difficulty in manufacturing due to the need for smaller geometric sizes and higher circuit density.
Innovation Solution
A semiconductor structure formation method involving ion doping on a mandrel material layer to create an anti-etching layer and a mandrel layer, where spacers form grooves that allow for precise etching of the target layer, enabling the formation of smaller critical dimensions and tighter pitch between target patterns without altering the photolithography process conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography processes are used, then the manufacturing process remains simple, but the critical dimension and pitch between target patterns cannot be sufficiently compressed
Solution Approach 1:
The mandrel material layer is divided into two functional regions: a first region forming the mandrel layer and a second region forming the anti-etching layer. This segmentation allows different portions of the same material layer to serve different purposes in the patterning process, enabling precise control over critical dimensions while maintaining process simplicity.
Solution Approach 2:
Ion doping is selectively applied to the second region of the mandrel material layer to create the anti-etching layer, while the first region remains undoped to form the mandrel layer. This local differentiation in material properties (etching resistance) enables precise pattern formation without requiring complex photolithography modifications.
2Manufacturing precision
If the geometric size is reduced to increase functional density, then the circuit precision increases, but the manufacturing difficulty and complexity increase
Solution Approach 1:
The etching resistance parameter of the mandrel material layer is changed through selective ion doping. By controlling the doping concentration and distribution in the second region, the anti-etching layer achieves sufficient etching resistance to maintain pattern fidelity at smaller geometric sizes, thereby enabling reduced critical dimensions without proportionally increasing manufacturing difficulty.
3Manufacturing precision
If the pitch between target patterns is compressed, then the functional density increases, but the matching degree between formed pattern and target pattern becomes harder to maintain
Solution Approach 1:
The anti-etching layer acts as an intermediary protective structure during the etching process. It prevents excessive etching into the target layer, thereby maintaining the matching degree between the formed pattern and target pattern even when the pitch between patterns is compressed to smaller dimensions.
Solution Approach 2:
The anti-etching layer is formed in advance through selective ion doping before the etching process. This preliminary preparation of the protective layer ensures that when etching occurs, the pattern fidelity is maintained from the outset, enabling precise pattern formation at compressed pitch values.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the implementation of smaller critical dimensions and further compression of pitch between target patterns, enhancing the high density and integration of ICs while maintaining process simplicity and compatibility with photolithography processes.
Implementation Method 1
performing ion doping on the mandrel material layer in the second region, the ion doping being suitable for increasing the etching resistance of the mandrel material layer
Data Source
AI summary
A semiconductor structure formation method and a mask are provided. One form of the formation method includes: providing a base, including a target layer; forming a mandrel material layer on the base, the mandrel material layer including a first region and a second region encircling the first region; performing ion doping on the mandrel material layer in the second region, the ion doping being suitable for increasing the etching resistance of the mandrel material layer, where the mandrel material layer in the second region serves as an anti-etching layer, and the mandrel material layer in the first region serves as a mandrel layer; forming a first trench that runs through, along a first direction, at least part of the mandrel material layer in the first region, where part of the mandrel material layer in the first region remains at two sides of the first trench along a second direction; forming spacers on side walls of the first trench, so that the spacers form a first groove by encircling; removing the mandrel layer to form second grooves; and etching, using the anti-etching layer and the spacers as masks, the target layer below the first groove and the second grooves, to form the target pattern. In embodiments and implementations of the present disclosure, a pitch between target patterns is further compressed.