Doped Silicon Electrode Plate for Plasma Etching Durability
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Solution Overview
Problem
Conventional silicon electrode plates for plasma etching suffer from rapid wear and irregular etching due to localized electrical charge concentration, leading to the formation of abrasion holes, which reduces the durability and uniformity of plasma etching, necessitating frequent replacement.
Innovation Solution
A silicon electrode plate with a silicon single crystal substrate doped with boron and either phosphorus or arsenic, within specific atomic ratio ranges (3 to 11 ppba of boron and 0.5 to 6 ppba of phosphorus or arsenic), which reduces abrasion and in-plane irregularities of etching gas ejecting through-holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon single crystal plate is used as the electrode plate for plasma etching, then the electrical conductivity is sufficient for plasma generation, but abrasion holes are easily generated at the terminal openings of etching gas ejecting through-holes due to localized electrical charge concentration, reducing durability
Solution Approach 1:
The patent applies local quality by doping specific regions of the silicon single crystal plate with particular elements (boron, phosphorus, arsenic, or antimony) at controlled concentrations. This creates localized variations in electrical conductivity and charge distribution properties at the through-hole terminal openings, reducing electrical charge concentration and preventing abrasion hole formation while maintaining overall plasma generation capability
Solution Approach 2:
The patent changes the chemical composition parameters of the silicon single crystal plate by introducing dopant elements at specific atomic ratios (0.01-5 mass% or 1-10 ppba). This parameter modification alters the electrical and mechanical properties of the material, reducing electrical charge concentration at critical locations and thereby preventing abrasion hole formation during plasma etching operations
2Reliability
If dopant elements are added to improve electrical conductivity and reduce abrasion, then electrical conductivity improves and abrasion is reduced, but in-plane irregularities occur in the generation of abrasion holes, affecting plasma uniformity
Solution Approach 1:
The patent precisely controls the dopant concentration parameters within specific ranges (0.01-5 mass% or 1-10 ppba) to optimize the balance between abrasion resistance and plasma uniformity. This parameter optimization ensures sufficient electrical conductivity and abrasion resistance while maintaining uniform plasma distribution across the wafer surface
Solution Approach 2:
The patent creates a composite material structure by combining silicon single crystal with specific dopant elements (boron, phosphorus, arsenic, or antimony) in controlled amounts. This composite composition provides both the electrical conductivity needed for plasma generation and the abrasion resistance required for durability, while maintaining uniform plasma etching through proper compositional control
3Productivity
If the silicon electrode plate is used for a long period to improve productivity, then more wafers can be processed, but abrasion holes accumulate and cause irregular etching, requiring early replacement
Solution Approach 1:
The patent applies beforehand cushioning by pre-doping the silicon single crystal plate with elements that reduce electrical charge concentration and abrasion susceptibility. This preventive measure cushions against the accumulation of abrasion holes during extended use, allowing the electrode plate to maintain etching uniformity and functionality over longer periods without requiring early replacement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped silicon electrode plate exhibits superior durability with reduced abrasion and uniform etching, allowing for longer plasma etching periods and reduced frequency of replacement, thereby enhancing semiconductor device development.
Implementation Method 1
electrical charge concentration areas (edge portion on which electrical charge is concentrated) are generated locally at the terminal openings of the etching gas ejecting through-holes
Implementation Method 2
high frequency voltage is impressed while etching gas 7 flows toward the wafer 4 through the etching gas ejecting through-holes 5. Thereby, plasma 2 is generated between the silicon electrode plate for plasma etching 1 and the wafer 4
Data Source
AI summary
This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.