Doped Substrate for Infrared Heating in Semiconductor Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Substrates used for depositing nitride-based materials in electronic and optoelectronic components often require high temperatures for thermal stripping, but some substrates are not sufficiently absorbent to reach these temperatures using infrared radiation, leading to inefficiencies and potential structural issues due to thick absorbent layers, and high energy costs.
Innovation Solution
A substrate structure with doped elements that absorb infrared radiation, combined with a roughened rear face and an optional absorbent layer, to increase infrared absorption and reach the necessary temperatures without disturbing the operation of high-frequency components, while minimizing the thickness and power requirements of the absorbent layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a thick absorbent layer is provided on the substrate to increase infrared absorption, then the substrate can reach the necessary temperature for thermal stripping, but bending phenomena or cracks may occur due to thermal and structural incompatibilities between the absorbent layer and substrate
Solution Approach 1:
The patent modifies the optical parameters of the substrate by introducing dopants that change its infrared absorption characteristics. This allows the substrate itself to absorb infrared radiation effectively without requiring a thick absorbent layer, thereby avoiding the structural problems associated with thick layers while still achieving the necessary temperature for thermal stripping.
Solution Approach 2:
The patent extracts the infrared absorption function from a separate absorbent layer and integrates it directly into the substrate through doping. This eliminates the need for a distinct thick absorbent layer that causes bending and cracking, while maintaining the temperature-raising capability needed for thermal stripping.
2Use of energy by stationary object
If a thick absorbent layer is used to achieve sufficient infrared absorption, then the front face can reach stripping temperature, but the thickness must be limited to prevent bending and cracking
Solution Approach 1:
The patent changes the optical absorption parameters of the substrate by doping it with specific elements. This enables the substrate to efficiently absorb infrared radiation throughout its volume, eliminating the need to carefully control and limit the thickness of a separate absorbent layer while still achieving effective heating.
3Temperature
If high power infrared furnaces are used to heat the substrate to the necessary temperature, then thermal stripping can be achieved, but energy costs increase
Solution Approach 1:
The patent modifies the substrate's infrared absorption parameters through doping, enabling it to efficiently convert infrared radiation into heat. This allows the use of lower power furnaces to achieve the same heating effect, thereby reducing energy costs while still reaching the necessary temperature for thermal stripping.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure effectively reaches temperatures between 700° C. and 1200° C. for thermal stripping while reducing the thickness and power needed for heating, minimizing structural stress and energy costs, and ensuring the components' high-frequency operation is not disrupted.
Implementation Method 1
doped elements that absorb infrared radiation so as to substantially increase infrared absorption by the structure
Implementation Method 2
the substrate has a suitable rear face roughness to increase the infrared absorption and thus the heating of the structure
Implementation Method 3
The heating source used to bring the front face of the substrate to the desired temperature is infrared radiation, which is converted into heat when it is absorbed by the substrate
Data Source
AI summary
A semiconductor structure that is to be heated. The structure includes a substrate for the front face deposition of a useful layer intended to receive components for electronics, optics or optoelectronics. The structure contains doped elements that absorb infrared radiation so as to substantially increase infrared absorption by the structure so that the front face reaches a given temperature when a given infrared power is supplied to the structure. At least one part of the doped elements have insufficient electrical activity or localization in the structure, such that they cannot disturb the operation of the components. In addition, a method of producing this structure and a method of forming a useful layer of semiconductor material on the structure.