Semiconductor Inter-field Dose Correction via Transformation Matrices
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Solution Overview
Problem
Existing semiconductor manufacturing methods face challenges in efficiently adapting inter-field dose correction maps between different photolithography masks, particularly when changes occur in die size, location, orientation, or technology, leading to non-uniform critical dimensions and requiring time-consuming reconfiguration of dose maps.
Innovation Solution
A method is developed to transform a dose correction map from a first photolithography mask to a second using transformation matrices in an orthogonal coordinate system, allowing for adaptation of dose correction maps across different masks with the same manufacturing stack and reactive ion etching processes, thereby reducing the need for manual reconfiguration and improving inter-field uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dose correction map is manually reconfigured for each new photolithography mask, then manufacturing precision is maintained, but loss of time increases due to time-consuming reconfiguration
Solution Approach 1:
The patent creates a master dose correction map that can be copied and transformed for different masks. Instead of manually reconfiguring dose maps for each mask, the system generates a reference map and uses transformation matrices to adapt it to new masks, significantly reducing setup time while maintaining precision
Solution Approach 2:
The patent transforms the dose correction map using mathematical transformation matrices that adjust parameters such as die size, location, and orientation. By changing the coordinate transformation parameters rather than manually reconfiguring the entire dose map, the system efficiently adapts to different masks while preserving critical dimension uniformity
2Manufacturing precision
If dose correction maps are customized for each specific mask configuration, then manufacturing precision is improved, but device complexity increases due to multiple unique dose maps
Solution Approach 1:
The patent creates a universal master dose correction map that can serve multiple different mask configurations. This single map is transformed using coordinate matrices to adapt to various die sizes, locations, and orientations, eliminating the need to maintain separate dose maps for each mask while preserving inter-field uniformity
Solution Approach 2:
The patent introduces transformation matrices as an intermediary between the master dose correction map and specific mask configurations. These matrices act as a mediator that translates the universal map into mask-specific corrections without requiring multiple unique dose maps, thereby reducing system complexity
3Adaptability or versatility
If transformation matrices are used to adapt dose correction maps, then adaptability is improved for different masks, but device complexity increases due to coordinate system transformations
Solution Approach 1:
The patent replaces manual, mechanical dose map reconfiguration processes with automated mathematical transformations. Coordinate transformation matrices automatically adjust the master dose map to different mask configurations, eliminating manual intervention and reducing operational complexity despite the mathematical computations involved
Data Source
AI summary
A method and apparatus are provided for adapting a semiconductor inter-field dose correction map from a first photolithography mask to a second photolithography mask using the same manufacturing stack and reactive ion etching processes, the method including: obtaining a first dose correction map for the first photolithography mask as a function of first chip or die identities; determining a first transformation matrix from the first chip or die identities of the first photolithography mask into an orthogonal coordinate system; determining a second transformation matrix from second chip or die identities of the second photolithography mask into the orthogonal coordinate system; and transforming the first dose correction map for the first photolithography mask into a second dose correction map for the second photolithography mask in correspondence with each of the first and second transformation matrices.