Double-Coil Inductive Links for Z-Axis Memory Crosstalk Reduction
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Solution Overview
Problem
In high-density z-axis memories (ZAMs), adjacent inductive links experience significant magnetic interference, leading to reduced signal-to-interference and noise ratio (SINR), which can halve memory access speed and require complex equalizer designs and higher power consumption.
Innovation Solution
Implementing a double coil pair inductive coupling links, driven in common or differential current modes, to reduce interference by generating counteracting magnetic fields, allowing simultaneous operation of adjacent links.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If single coil inductive links are used in high-density z-axis memories, then memory cell density can be increased, but magnetic interference between adjacent links significantly reduces SINR
Solution Approach 1:
The patent divides a single coil structure into two separate coils (first coil and second coil) that are driven independently. This segmentation allows the magnetic fields from adjacent links to be independently controlled and cancelled, resolving the magnetic interference problem while maintaining high memory cell density in z-axis memories
Solution Approach 2:
The patent converts the harmful magnetic interference from adjacent inductive links into a beneficial effect by using the interference pattern itself to cancel out crosstalk. By driving the first and second coils with complementary signals, the magnetic field from one coil cancels the interference from adjacent links, transforming the harmful interference into a useful cancellation mechanism that improves SINR
2Reliability
If complex equalizer design and error coding are implemented to ensure data recovery, then data reliability is improved, but power consumption increases
Solution Approach 1:
The patent applies preliminary action by pre-cancelling magnetic interference through the double coil configuration before data transmission occurs. By establishing counteracting magnetic fields in advance, the system prevents interference from affecting the signal, thereby maintaining high data reliability without requiring additional power-consuming equalization and error correction operations
3Productivity
If adjacent inductive links are driven simultaneously for high throughput, then memory access speed improves, but magnetic interference reduces SINR by half
Solution Approach 1:
The patent enables simultaneous driving of adjacent inductive links by converting the harmful magnetic interference into a beneficial cancellation effect. The first and second coils are driven with complementary signals that create opposing magnetic fields, which cancel out the interference from simultaneously operating adjacent links, thereby maintaining high memory access speed without SINR degradation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The double coil pair configuration enhances SINR by up to 11.9 dB, reduces crosstalk, and improves memory access speed while lowering power consumption and die area requirements.
Implementation Method 1
Communication between the host dies and the ZAMs is realized through inductive coupling links
Implementation Method 2
the magnetic interference may impact the signal to interference and noise ratio (SINR) significantly
Data Source
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AI summary
Disclosed herein are devices, systems, and methods for driving inductive links in a memory such as a z-axis memory. The memory includes a first memory cell connected via a first inductive link comprising a first pair of double coils and a second memory cell connected via a second inductive link comprising a second pair of double coils. The first inductive link is arranged adjacent to the second inductive link. A driver circuit is configured to simultaneously drive the first and second pair of double coils with a drive current to read or write the first and second memory cells using the first and second inductive links.