Double Exposure Pattern Decomposition and Optical Proximity Correction
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Solution Overview
Problem
The existing methods for pattern decomposition and optical proximity correction in double exposure photomask manufacturing are time and cost inefficient, as they require repetitious simulations and skilled personnel to form finer patterns without significant deformation due to optical proximity effects.
Innovation Solution
A method that defines first and second exposure patterns through logical operations, performs optical proximity correction, and includes contour simulation to efficiently separate and correct patterns, allowing for automatic confirmation of target patterns within an allowable error range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing methods for pattern decomposition and optical proximity correction are used in double exposure photomask manufacturing, then patterns can be formed, but the process is time and cost inefficient due to requiring repetitious simulations and skilled personnel
Solution Approach 1:
The patent divides the pattern decomposition process into multiple stages: initial pattern decomposition, optical proximity correction, and iterative refinement. By segmenting the complex correction process into manageable steps with automated feedback loops, the method achieves high pattern accuracy without requiring continuous manual intervention and repetitious simulations, thereby reducing process time while maintaining precision.
Solution Approach 2:
The patent implements automated feedback mechanisms where the results of optical proximity correction are continuously evaluated and fed back into the decomposition process. This automated feedback loop allows the system to self-correct and refine patterns without requiring skilled personnel to perform repetitious simulations, thus reducing both time loss and dependency on expert intervention while maintaining manufacturing precision.
2Manufacturing precision
If existing methods for pattern decomposition and optical proximity correction are used in double exposure photomask manufacturing, then patterns can be formed, but the process is cost inefficient due to requiring skilled personnel and repetitious simulations
Solution Approach 1:
The patent enables the pattern decomposition and optical proximity correction system to perform self-service through automated algorithms and feedback mechanisms. The system automatically evaluates correction results, identifies areas needing refinement, and performs iterative corrections without requiring skilled personnel to manually review and adjust each step. This automation significantly reduces labor costs and manufacturing expenses while maintaining high pattern accuracy through systematic self-correction.
Solution Approach 2:
The patent replaces the manual mechanical process of skilled personnel performing repetitious simulations with automated computational algorithms. The automated system uses computer-based optical proximity correction algorithms to perform what previously required human expertise and iterative manual simulation, thereby eliminating the cost associated with skilled labor while maintaining or improving pattern accuracy through more consistent and systematic computational methods.
3Measurement precision
If double exposure method is used to form finer patterns, then resolution is improved, but optical proximity phenomenon causes pattern deformation
Solution Approach 1:
The patent applies optical proximity correction as a preliminary action before the actual exposure process. By pre-calculating and compensating for expected optical proximity effects during the pattern decomposition and correction phases, the system prepares corrected patterns that anticipate and counteract the deformation that would occur during exposure. This preliminary correction action enables the double exposure method to achieve fine pattern resolution without suffering from optical proximity-induced deformation.
Solution Approach 2:
The patent implements preliminary anti-action by introducing subsidiary patterns and adjusting pattern widths in opposition to the expected optical proximity effects. The optical proximity correction process deliberately modifies the designed patterns in reverse to the anticipated deformation direction, so that when optical proximity phenomenon occurs during actual exposure, the patterns deform back to their intended shape. This preliminary counter-action enables high resolution patterning while preventing net pattern deformation.
Data Source
AI summary
A pattern decomposition and optical proximity correction method for double exposure comprises defining second exposure patterns by performing a logical operation on target patterns and first exposure patterns, comparing the first and second exposure patterns with the target patterns by performing a logical operation on the first and second exposure patterns, performing optical proximity correction on the first exposure patterns to form fourth exposure patterns, performing the optical proximity correction on the second exposure patterns to form fifth exposure patterns, and comparing the fourth and fifth exposure patterns with the target patterns by performing a logical operation on the fourth and fifth exposure patterns.