Double-Gate MFMIS-FET Structure for Higher ON Current Memory
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Solution Overview
Problem
Ferroelectric memory devices, such as FeFET and FeRAM, face limitations due to low ON current, which affects their performance in high-speed data applications by causing slow read and write speeds.
Innovation Solution
A double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure is introduced, featuring a lower and upper gate electrode to control the polarization state of ferroelectric structures, resulting in a higher ON current and improved conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a conventional ferroelectric memory device structure is used, then the device can store data using ferroelectricity, but the ON current is low resulting in slow read and write speeds
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate electrode and second gate electrode) positioned at different locations along the channel. This segmentation allows independent control of different channel regions, enabling higher ON current through coordinated gating while maintaining ferroelectric memory functionality for data storage
Solution Approach 2:
The invention transitions from a conventional single-gate planar structure to a multi-gate three-dimensional configuration where gate electrodes are positioned at different spatial locations (e.g., top and bottom gates, or side gates). This dimensional change enhances electric field control over the channel, significantly improving ON current and thereby read/write speeds while preserving the ferroelectric storage mechanism
2Reliability
If a double gate MFMIS-FET structure is introduced, then the ON current and conductivity are improved, but the device complexity increases
Solution Approach 1:
The multi-gate structure serves multiple functions simultaneously: the first and second gate electrodes collectively control channel conductivity to achieve high ON current, while the ferroelectric structures maintain data storage capability. This multi-functionality justifies the increased structural complexity by delivering both high performance and memory functionality
Solution Approach 2:
The invention merges the control functions of multiple gate electrodes with the data storage function of ferroelectric structures in a unified device architecture. The gate electrodes and ferroelectric structures work together as an integrated system, where the combined structure achieves high ON current while maintaining the essential memory storage capability, thus balancing complexity with functional benefit
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The double gate MFMIS-FET structure enhances the ON current, leading to faster read and write speeds and expands the applications of ferroelectric memory in high-speed data applications.
Implementation Method 1
Some promising candidates for next generation memory technology utilize ferroelectricity to store data, such as ferroelectric field-effect transistor (FeFET) memory
Implementation Method 2
A first gate electrode and a second gate electrode may be disposed at different lateral locations along the channel structure. The first gate electrode and the second gate electrode may control a conductivity of the selectively-conductive channel
Data Source
AI summary
Various embodiments of the present disclosure are directed towards an integrated chip (IC) comprising a lower gate electrode disposed in a dielectric structure. A first ferroelectric structure overlies the lower gate electrode. A first floating electrode structure overlies the first ferroelectric structure. A channel structure overlies the first floating electrode structure. A second floating electrode structure overlies the channel structure. A second ferroelectric structure overlies the second floating electrode structure. An upper gate electrode overlies the second ferroelectric structure.