Double-Gate Transistor Switching to Suppress Miller Effect
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Field-effect controlled power transistor devices face challenges in robustness against parasitic voltage spikes and efficient switching operations due to rapid current changes, which can lead to undesirable electromagnetic interferences and inefficiencies.
Innovation Solution
A double gate transistor device is implemented with a first and second gate electrode, both dielectrically insulated from the body region, allowing for independent control of conducting channels to manage parasitic capacitance and minimize Miller effect, enabling precise switching and robust operation against voltage spikes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single gate electrode is used in conventional power transistors, then the device structure is simple, but the transistor is vulnerable to parasitic voltage spikes and cannot efficiently control switching operations
Solution Approach 1:
The single gate electrode is segmented into two separate gate electrodes (first gate electrode and second gate electrode) positioned at different locations along the channel. This segmentation allows independent control of different channel regions, enabling selective formation of conducting channels to protect against voltage spikes while maintaining manageable device complexity through modular gate control
Solution Approach 2:
A conducting channel is formed as an intermediary element between the gate electrodes and the current path. By controlling the formation and interruption of this conducting channel through dual gate electrodes, the device mediates between the input control signals and the main current flow, providing protection against parasitic voltage spikes while maintaining efficient switching
2Speed
If rapid current changes are allowed for fast switching, then switching speed is improved, but parasitic voltage spikes and electromagnetic interferences increase
Solution Approach 1:
The first gate electrode is activated in advance to pre-form a conducting channel before the main switching operation. This preliminary action prepares the current path in advance, allowing the second gate electrode to then control the actual switching without causing rapid current changes that would generate parasitic voltage spikes and electromagnetic interferences
Solution Approach 2:
The switching operation is divided into periodic phases: first gate electrode activation to form conducting channel, followed by second gate electrode control for actual switching. This periodic, multi-stage action replaces single rapid switching with controlled sequential operations, maintaining switching speed while reducing harmful parasitic effects
3Ease of operation
If conventional single gate control is used, then device operation is simple, but precise control of conducting channels for efficient switching is not achieved
Solution Approach 1:
The gate control function is segmented into two independent gate electrodes that can be controlled separately. This segmentation enables precise control of conducting channel formation and interruption at different locations and times, achieving high switching control precision while maintaining ease of operation through independent gate drive circuits
Solution Approach 2:
The control parameters (voltage levels, timing sequences) of the two gate electrodes are independently adjusted to optimize conducting channel formation. By changing electrical parameters of each gate electrode separately, precise control of switching operations is achieved while maintaining straightforward operation through independent parameter adjustment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The double gate transistor device effectively reduces parasitic capacitance and Miller effect, allowing for precise control of switching operations, enhancing robustness against voltage spikes and improving efficiency in switching processes.
Implementation Method 1
Field-effect controlled power transistor devices... switching on and off dependent on a voltage level of a drive voltage applied between a drive node (often referred to as gate node) and a load node
Implementation Method 2
A gate electrode is dielectrically insulated from the body region by a first gate dielectric, and a second gate electrode is dielectrically insulated from the body region by a second gate dielectric
Data Source
AI summary
In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device.