Double-Gate Organic Thin Film Transistor for Threshold Voltage Adjustment
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Solution Overview
Problem
The high threshold voltage of organic thin film transistors leads to significant power consumption, signal distortion, and mal-operation in electronic circuits, particularly in LCD display panels, due to the lack of control over the threshold voltage and the inherent characteristics of the materials used.
Innovation Solution
A double-gate organic thin film transistor structure is introduced, where two gates share the source, drain, and organic semiconductor channel area, allowing for adjustable threshold voltage by controlling the voltages of each gate, enabling the transistor to be switched between enhanced-type and depletion-type configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional single-gate organic thin film transistor is used, then the manufacturing process is simple, but the threshold voltage is too high causing signal distortion and high power consumption
Solution Approach 1:
The transistor is divided into two separate gates (first gate and second gate) that independently control the channel from opposite sides. This segmentation allows each gate to contribute to threshold voltage control, enabling the threshold voltage to be adjusted to appropriate levels and reducing signal distortion while maintaining manufacturing simplicity
Solution Approach 2:
The invention transitions from a single-gate configuration to a double-gate configuration, adding another dimensional control mechanism. The two gates are positioned on opposite sides of the organic semiconductor layer, providing bidirectional control over the channel and enabling precise threshold voltage adjustment to eliminate signal distortion
2Manufacturing precision
If surface treatment is applied to make organic thin film transistors depletion type, then the threshold voltage is reduced and signal transmission accuracy is improved, but the pixel area transistors also become depletion type causing mal-operation
Solution Approach 1:
The double-gate structure enables independent control of transistor characteristics in different circuit areas. By adjusting the voltage applied to the second gate, transistors in the driving circuit area can be configured as depletion type for accurate signal transmission, while transistors in the pixel area maintain enhanced-type characteristics for proper switching operation
Solution Approach 2:
The invention introduces dynamic control capability through the second gate, allowing the transistor characteristics to be adjusted according to different operational requirements. The threshold voltage can be dynamically modified by changing the second gate voltage, enabling the same transistor structure to serve different functions in different circuit regions
Data Source
AI summary
This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.