Double-Height Standard Cell Layout With Different Fin Subregions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor design technologies face challenges in efficiently integrating custom and standard cells in semiconductor devices, particularly in optimizing the layout to minimize space while maintaining functional integrity, due to differences in cell sizes and orientations.
Innovation Solution
The proposed solution involves a double height cell structure with specific arrangements of active and dummy fins, along with gate patterns, to create a compact layout that allows for efficient integration of standard cells within the semiconductor device, utilizing a combination of fin patterns and gate structures to optimize space utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If custom cells are designed with specific arrangements for higher-level logic functions, then functional specificity is improved, but footprint area increases significantly compared to standard cells
Solution Approach 1:
The custom cell is segmented into a core region containing essential logic functions and extension regions containing additional logic functions. The core region uses a standardized layout that matches standard cell footprints, while extension regions are added only when needed for specific custom functionality. This segmentation allows the cell to maintain standard cell compatibility for basic functions while providing optional expansion for custom requirements.
Solution Approach 2:
The invention embeds a standardized core region within the custom cell structure, which itself is nested within the larger custom cell footprint. The core region contains standardized logic functions that can operate independently, while outer layers contain custom logic functions. This nested structure allows the cell to function as a standard cell when only core functions are needed, while supporting custom functionality when extension regions are activated.
2Ease of operation
If standard cells are designed with uniform dimensions for easy placement, then ease of placement is improved, but flexibility for custom arrangements is reduced
Solution Approach 1:
The custom cell is designed with a universal core region that maintains the same footprint and interface specifications as standard cells, allowing it to be placed using the same automated placement tools. The extension regions provide additional functionality while maintaining compatibility with standard cell placement grids. This multi-functionality allows the same cell structure to serve both as a standard cell for automated placement and as a custom cell for specific functional requirements.
Solution Approach 2:
The invention extends the standard cell structure from a two-dimensional uniform grid into a three-dimensional hierarchical structure with core and extension regions. The core region maintains the standard two-dimensional footprint for compatibility, while extension regions are added in additional spatial dimensions or as overlay structures. This dimensional extension allows custom functionality without disrupting the standard placement grid system.
3Adaptability or versatility
If cells are integrated with different sizes and orientations, then functional integration is improved, but layout complexity increases
Solution Approach 1:
The custom cell employs asymmetric arrangement of logic functions within the extension regions, placing different logic functions in different orientations and positions based on their specific requirements. The core region maintains symmetric, standardized positioning for compatibility. This asymmetric design within a standardized framework allows optimal functional integration while managing layout complexity through clear separation between standardized and custom regions.
Data Source
AI summary
A semiconductor device includes: fins configured to include: first active fins having a first conductivity type; and second active fins having a second conductivity type; and at least one gate structure formed over corresponding ones of the fins; and wherein the fins and the at least one gate structure are located in at least one cell region; and each cell region, relative to the second direction, including: a first active region which includes a sequence of three or more consecutive first active fins located in a central portion of the cell region; a second active region which includes one or more second active fins located between the first active region and a first edge of the cell region; and a third active region which includes one or more second active fins located between the first active region and a second edge of the cell region.