Double-Layer 2D Material Structure for Bandgap and Contact Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing faces challenges with miniaturization, including heat dissipation, leakage current, noise, and interference, which require new materials or structures that can handle miniaturization processes, gate control, and conductive properties of semiconductors.
Innovation Solution
The development of an artificial double-layer 2D material with a specific layered atomic structure, comprising transition metals and heterogeneous atoms, bound by chemical bonding and van der Waals forces, which is manufactured using a novel synthesis platform and precise control of atom layer removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If single-layer 2D materials are used, then the structure is simple and manufacturing is easier, but the electrical characteristics and energy gap controllability are insufficient
Solution Approach 1:
The patent employs composite 2D material structures combining different atomic layers (e.g., TMD layers with graphene or h-BN layers) to achieve superior electrical characteristics and energy gap controllability while maintaining manufacturing feasibility through established CVD techniques
2Ease of manufacture
If conventional 2D materials are used, then the manufacturing process is established, but the contact resistance is high and on-state current is limited
Solution Approach 1:
The patent implements local quality enhancement by introducing specific atomic layers (such as metallic TMD phases or doped regions) at contact interfaces to reduce contact resistance, while maintaining the overall structure compatible with established manufacturing processes
Solution Approach 2:
The patent utilizes parameter changes by controlling the phase, composition, and thickness of atomic layers to optimize electrical properties including contact resistance and on-state current, achieving better performance within existing manufacturing frameworks
3Length of moving object
If 2D materials are miniaturized for advanced semiconductor applications, then the device size is reduced, but heat dissipation and leakage current issues worsen
Solution Approach 1:
The patent employs composite structures with materials having complementary thermal and electrical properties, such as combining TMD layers with high thermal conductivity materials like graphene or h-BN, to improve heat dissipation in miniaturized devices while maintaining low leakage current characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This artificial double-layer 2D material exhibits improved electrical characteristics, increased energy gap controllability, lower contact resistance, and enhanced on-state current compared to conventional single-layer 2D materials, making it suitable for advanced semiconductor applications.
Implementation Method 1
atoms of the first layered atomic structure and the second layered atomic structure are bound by chemical bonding
Implementation Method 2
the first layered atomic structure and the second layered atomic structure are bound by van der Waals forces
Data Source
AI summary
An artificial double-layer two-dimensional material includes a first layered atomic structure and a second layered atomic structure. The first layered atomic structure includes a first middle atomic layer, a first lower atomic layer, and a first upper atomic layer. The first lower and the first upper atomic layers are disposed on lower and upper surfaces of the first middle atomic layer respectively. The second layered atomic structure includes a second middle atomic layer, a second lower atomic layer, and a second upper atomic layer. The second lower and the second upper atomic layers are disposed on lower and upper surfaces of the second middle atomic layer respectively. The first middle atomic layer and the second middle atomic layer are two-dimensional planar atomic structures formed of transition metals. The first lower and the first upper atomic layers are 2D planar atomic structures formed of heterogeneous atom.