Double Nanoimprint Lithography for Uniform Pattern Dimensions

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Solution Overview

Problem

Nanoimprint lithography struggles with forming patterns with uniform critical dimensions due to varying pattern densities, leading to differences in residual polymeric compound layer thickness and subsequent pattern dimensions in high and low density regions.

Innovation Solution

The method employs a double nanoimprint process using a first and second replicate mold, where the first mold imprints patterns uniformly and the second mold corrects density variations by etching specific regions, ensuring consistent pattern dimensions through multiple polymeric compound layers and etching processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If single nanoimprint process is used, then production efficiency is improved, but pattern critical dimension uniformity deteriorates due to varying pattern densities

Engineering Contradiction:
Improveproduction efficiencyVSAvoidpattern critical dimension uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent divides the patterning process into two separate nanoimprint steps: a first nanoimprint process that forms initial patterns, and a second nanoimprint process that forms additional patterns. This segmentation allows each process to be optimized independently, with the first process handling high-density regions and the second process handling low-density regions, thereby resolving the contradiction between production efficiency and pattern uniformity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The first nanoimprint process is performed as a preliminary action to form initial patterns and establish a foundation for the second process. By pre-forming patterns in the first process, the second process can focus on adding remaining patterns without repeating all steps, thus maintaining high productivity while achieving uniform critical dimensions across varying density regions.

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If single polymeric compound layer is used, then process complexity is reduced, but residual layer thickness uniformity deteriorates

Engineering Contradiction:
Improveprocess complexityVSAvoidresidual layer thickness uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent segments the polymeric compound layer into two distinct layers: a first polymeric compound layer for the first nanoimprint process, and a second polymeric compound layer for the second nanoimprint process. This segmentation enables independent optimization of each layer's thickness and material properties, ensuring uniform residual layer thickness in both high and low density regions while maintaining manageable process complexity through systematic organization.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different polymeric compound layers are used for different patterning regions. The first polymeric compound layer is optimized for high-density pattern regions, while the second polymeric compound layer is optimized for low-density pattern regions. This local quality approach ensures that each region receives the appropriate material properties and thickness control needed for uniform residual layer formation.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If varying pattern densities are imprinted simultaneously, then manufacturing cost is reduced, but pattern dimension control deteriorates

Engineering Contradiction:
Improvemanufacturing costVSAvoidpattern dimension control
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent segments the patterning of varying density regions into two separate nanoimprint processes. High-density regions are patterned in the first process, while low-density regions are patterned in the second process. This segmentation allows for optimized mold designs and process parameters for each density type, achieving precise pattern dimension control while maintaining cost-effectiveness through the use of nanoimprint technology for both processes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes key process parameters between the two nanoimprint processes, including polymeric compound layer thickness, imprint pressure, and mold design. By adjusting these parameters specifically for high-density versus low-density regions in separate processes, precise pattern dimension control is achieved across varying densities while maintaining the cost advantages of nanoimprint manufacturing.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures uniform thickness of residual polymeric layers and consistent critical dimensions of patterns across high and low density regions, addressing the issue of varying pattern densities and improving manufacturing yields in nanoimprint lithography.

Implementation Method 1

a first polymeric compound layer is coated on the first substrate. Then, a first nanoimprint process is performed to nanoimprint the first patterns into the first polymeric compound layer

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Implementation Method 2

a second polymeric compound layer is formed to be coated on the first substrate. Subsequently, a second nanoimprint process is performed to nanoimprint the second pattern into the second polymeric compound layer

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Data Source

PatentUS11960203B2Method of forming patterns on substrate by double nanoimprint lithography
Publication Date: 2024.04.16 UNITED MICROELECTRONICS CORP
  • US11960203B2 patent drawing
  • US11960203B2 patent drawing
  • US11960203B2 patent drawing

AI summary

A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.