Double Patterning Resist Insolubilization for Pattern Integrity
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Solution Overview
Problem
The double patterning technique faces challenges in forming resist patterns with small differences in pattern height and maintaining excellent cross-sectional shapes, particularly when transitioning from a first resist pattern to a second pattern due to solvent effects and exposure impacts, which can lead to deformation and irregular shapes, especially in forming both narrow and wide areas.
Innovation Solution
A double patterning method involving the use of a first resist film exposed and developed using a specific photoresist composition, followed by a second resist film applied in space areas of the first pattern and developed with an organic solvent, where the first resist pattern is insoluble or scarcely soluble in the second developer, ensuring minimal deformation and maintaining rectangular cross-sectional shapes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a double patterning technique is used to improve resolution, then finer resist patterns can be formed, but deformation and dissolution of the first resist pattern occur due to solvent and exposure effects
Solution Approach 1:
An insolubilizing treatment step is introduced as an intermediary process between forming the first resist pattern and forming the second resist pattern. This treatment modifies the surface properties of the first resist pattern to make it insoluble in the second developer, preventing deformation and dissolution while allowing the double patterning process to proceed
Solution Approach 2:
The solubility parameter of the first resist pattern is changed through insolubilizing treatment. The treatment alters the chemical or physical properties of the resist material so that it becomes insoluble or scarcely soluble in the second developer, thereby preventing the harmful effects of solvent and exposure during the second patterning step
2Manufacturing precision
If a double patterning technique is used to form finer patterns, then resolution is improved, but large differences in pattern height occur and rectangular cross-sectional shapes are not maintained
Solution Approach 1:
The insolubilizing treatment acts as a mediator that stabilizes the first resist pattern before the second patterning step. By preventing dissolution and deformation, it maintains the original cross-sectional shape and pattern height, ensuring that the final double pattern has uniform dimensions and excellent rectangular cross-sections
Solution Approach 2:
The insolubilizing treatment is performed beforehand to protect the first resist pattern from future damage. This preventive measure cushions against the harmful effects of the second developer and exposure, ensuring that the first pattern remains intact throughout the subsequent processing steps
3Manufacturing precision
If a double patterning technique is used to improve resolution, then finer patterns can be formed, but it becomes difficult to form patterns with both narrow and wide areas
Solution Approach 1:
The insolubilizing treatment enables the first resist pattern to serve as a stable mask for the second patterning step. This stability allows the second resist to be selectively deposited and developed in both narrow and wide areas, providing the versatility needed to create complex pattern geometries with varying dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents deformation and dissolution of the first resist pattern during the formation of the second pattern, allowing for the creation of resist patterns with small height differences and excellent cross-sectional shapes, capable of forming both narrow and wide areas reliably.
Implementation Method 1
The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.
Data Source
AI summary
A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.


