Double Patterning Resist Pattern Overlap Control
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Solution Overview
Problem
Double patterning techniques in substrate processing face challenges in achieving accurate pattern formation due to variations in resist coverage and overlap, leading to inconsistencies in the formed patterns.
Innovation Solution
A method involving the use of a substrate processing apparatus that includes a drawing-data acquisition unit, resist forming unit, drawing unit, correction unit, development unit, etching unit, and stripping unit, which forms first and second resist patterns with sub-patterns to uniformize resist coverage and improve accuracy by adjusting the overlap between patterns during lithography and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If double patterning is used to form predetermined patterns, then pattern formation capability is improved, but manufacturing precision deteriorates due to variations in resist coverage and overlap
Solution Approach 1:
The patent divides the resist pattern formation into multiple discrete steps: forming a first resist pattern, forming a second resist pattern, and forming a third resist pattern. Each pattern is formed with specific opening patterns that overlap in controlled ways to create the final predetermined pattern. This segmentation allows independent optimization of each resist pattern formation step, improving overall manufacturing precision while maintaining the double patterning capability.
Solution Approach 2:
The patent applies different design rules and coverage requirements to different regions of the resist patterns. Specifically, the first opening pattern, second opening pattern, and third opening pattern have different overlap relationships and coverage requirements in different areas. This local quality approach allows optimization of resist coverage uniformity in critical regions while maintaining pattern formation flexibility elsewhere, thereby improving manufacturing precision.
2Adaptability or versatility
If resist patterns are formed with overlap to create predetermined patterns, then pattern complexity is improved, but resist coverage uniformity deteriorates
Solution Approach 1:
The patent performs preliminary design and calculation of the opening patterns before actual resist formation. The first opening pattern, second opening pattern, and third opening pattern are designed with predetermined overlap relationships and coverage ratios. This preliminary action ensures that when the resist patterns are formed, the coverage is uniformly distributed across the substrate, preventing coverage variations that would arise from ad-hoc pattern overlapping.
Solution Approach 2:
The patent changes key parameters of the resist patterns including the overlap area ratios, pattern densities, and spatial distributions of the first, second, and third opening patterns. By carefully controlling these parameters, the patent achieves uniform resist coverage across the substrate while maintaining the complexity needed for predetermined pattern formation. Specifically, the coverage ratios between overlapping patterns are optimized to ensure uniformity.
Data Source
AI summary
According to one embodiment, a pattern forming method includes forming a first film on an object to be processed, forming a first opening pattern and a second opening pattern in the first film, forming a second film, forming a third opening pattern and a fourth opening pattern in the second film, and processing the object to be processed. The second opening pattern is provided in a position where the second opening pattern does not overlap the first opening pattern in plan view. The third opening pattern is provided in a position where the third opening pattern partly overlaps the first opening pattern and does not overlap the second opening pattern in plan view. The fourth opening pattern is provided in a position where the fourth opening pattern does not overlap the first opening pattern, the second opening pattern, and the third opening pattern.