Double Patterning Semiconductor Device Manufacturing
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Solution Overview
Problem
The increasing integration density of semiconductor devices poses challenges in forming minute patterns using traditional methods with KrF or ArF light sources, as these methods struggle to achieve the required precision and accuracy.
Innovation Solution
A double patterning method involving multiple material layers with different etching selectivities, where each layer is etched using specific gases and processes to form and refine patterns, allowing for the creation of precise line and space patterns, and ultimately enabling the formation of minute semiconductor device features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional single patterning methods using KrF or ArF light sources are used, then the manufacturing process is simple, but the manufacturing precision of minute patterns deteriorates
Solution Approach 1:
The patent applies segmentation by dividing the pattern formation process into two distinct stages: first patterning and second patterning. The first material layer is patterned initially, then the second material layer is patterned separately with different etching conditions. This segmentation allows each layer to be optimized independently, achieving minute pattern precision that cannot be obtained with traditional single-step patterning methods.
Solution Approach 2:
The patent introduces a vertical dimension by stacking multiple material layers (first material layer and second material layer) with different etching selectivities. Instead of attempting to pattern everything in a single horizontal plane, the solution moves to three-dimensional space, utilizing depth and layering to achieve the required pattern precision while maintaining process feasibility.
2Manufacturing precision
If multiple material layers with different etching selectivities are used, then the manufacturing precision of minute patterns is improved, but the device complexity increases
Solution Approach 1:
The patent applies local quality by assigning different etching selectivities to different material layers. The first material layer has a first etching selectivity relative to the object layer, while the second material layer has a second etching selectivity that differs from the first. This allows each layer to be etched with optimized parameters, achieving high precision in local regions without requiring complex global process adjustments.
Solution Approach 2:
The patent uses composite material structures consisting of the first material layer and second material layer with different etching selectivities. This composite approach enables selective etching of each layer while maintaining the integrity of the overall structure, achieving minute pattern precision through the synergistic combination of multiple materials with complementary properties.
3Manufacturing precision
If the first material layer thickness is reduced to form precise patterns, then the manufacturing precision is improved, but the reliability of pattern formation deteriorates
Solution Approach 1:
The patent applies preliminary action by forming the first material layer with a first thickness that is greater than the minimum required thickness before proceeding to pattern formation. This preliminary thicker layer provides a robust foundation that ensures reliable pattern formation, and subsequent etching processes remove the excess material to achieve the final precise dimensions. The preliminary action prevents pattern formation failures that would occur with minimally thick layers.
Solution Approach 2:
The patent uses beforehand cushioning by maintaining the first material layer thickness above the minimum threshold during the patterning process. This cushioning thickness acts as a buffer that prevents pattern collapse or formation defects, ensuring reliable pattern creation even when etching parameters vary. The cushioning is removed in controlled steps to achieve the final precise pattern dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively forms precise patterns, enabling the manufacturing of advanced semiconductor devices by allowing for the creation of smaller features and improving the integration density of semiconductor devices.
Implementation Method 1
forming first patterns of the second material layer by etching the second material layer using the first patterns of the third material layer as an etching mask
Implementation Method 2
forming first patterns of the first material layer by etching the first material layer exposed by the etching mask including the first patterns of the second material layer
Implementation Method 3
forming first patterns of a third material layer having lines and space patterns on the second material layer
Implementation Method 4
The first material layer may comprise an amorphous carbon layer (ACL). The ACL may be formed using a coating method or a chemical vapor deposition (CVD) method
Data Source
AI summary
Provided is a method of manufacturing a semiconductor device using double patterning. The method includes: forming a first material layer pattern having recesses in a first direction on an object layer and a second material layer pattern formed on the first material layer pattern; selectively etching the second material layer pattern and the first material layer pattern in a direction perpendicular to the first direction to form an etching mask; and etching the object layer to form minute patterns.