Double Plasma Ion Source for Large Molecule Gas Ionization
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Solution Overview
Problem
Ion implantation systems face challenges in efficiently operating with both large molecule gases like decaborane and octadecaborane, which require low source wall temperature and low discharge power, while standard implant gases need high wall temperature and high discharge power, making existing systems unsuitable for diverse applications.
Innovation Solution
A double plasma ion source system with two plasma chambers, where the first chamber generates electrons to inject into the second chamber, allowing for efficient ionization of both large molecule and standard gases, maintaining low wall temperatures for large molecules and high discharge power for standard gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single plasma chamber is used with high discharge power and high wall temperature for standard implant gases, then ion beam current is sufficient for standard gases, but large molecule gases undergo thermal dissociation and contamination occurs
Solution Approach 1:
The single plasma chamber is divided into two separate plasma chambers: a first plasma chamber for generating electrons and a second plasma chamber for ionizing the source gas. This segmentation allows each chamber to operate under optimized conditions - the first chamber can run at high power for efficient electron generation, while the second chamber maintains lower temperature to prevent thermal dissociation of large molecule gases.
Solution Approach 2:
Electrons generated in the first plasma chamber serve as an intermediary to transfer energy to the source gas in the second chamber for ionization. This indirect ionization mechanism allows the second chamber to achieve sufficient ion beam current without requiring high discharge power or high wall temperature that would cause thermal dissociation.
2Object-affected harmful factors
If low discharge power and low wall temperature are used for large molecule gases, then thermal dissociation is prevented, but ion beam current is insufficient for practical applications
Solution Approach 1:
The ion generation process is segmented into two stages across two chambers: electron generation in the first chamber and ionization in the second chamber. This allows the second chamber to operate at low power and temperature to prevent thermal dissociation, while the first chamber compensates by generating sufficient electrons to achieve the required ion beam current.
Solution Approach 2:
A population of electrons acts as an intermediary carrier, generated efficiently in the first chamber at high power, then transferred to the second chamber where they ionize the source gas at low power. This intermediary mechanism decouples the power requirements from the ionization process, enabling low-power operation in the source chamber while maintaining high ion beam current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient ionization of both large molecule and standard gases, preventing dissociation and contamination, and achieving high ion beam currents suitable for various ion implantation applications.
Implementation Method 1
a first plasma chamber, referred to as an electron source plasma chamber, for generating a plasma from ionization of a first source gas
Implementation Method 2
a second plasma chamber, referred to as an ion source plasma chamber, into which electrons from the electron source plasma chamber are injected, creating a plasma from a second source gas
Implementation Method 3
The ion source can include a high voltage extraction system including an electrode system configured to extract ions from the ion source plasma chamber via an extraction aperture formed therein
Data Source
AI summary
An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.