Double Plug Tone Inversion Patterning for Etch Resistance
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Solution Overview
Problem
Tone inversion patterning techniques face challenges with spin-on materials lacking etch resistance, which affects maintaining local CD and blocking features, especially in advanced node semiconductor processing where pillar flop concerns are prominent.
Innovation Solution
A double plug method involving a multi-line layer with alternating materials, where a first plug layer is deposited using atomic layer deposition (ALD) and a second plug layer using spin-on deposition, both in patterned recesses to enhance etch resistance and feature preservation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If spin-on materials are used for tone inversion, then planarization of wider features is achieved, but etch resistance is insufficient causing local CD variation and block displacement
Solution Approach 1:
The patent combines spin-on materials with deposited materials (such as silicon nitride or silicon oxide) to form a composite plug structure. The spin-on material provides planarization capability while the deposited material contributes etch resistance, resolving the contradiction between these two opposing requirements in tone inversion patterning.
Solution Approach 2:
The plug structure is divided into multiple segments: a spin-on material portion for planarization and a deposited material portion for etch resistance. This segmentation allows each material to perform its specialized function without compromising the other, addressing both planarization and etch resistance requirements simultaneously.
2Device complexity
If single deposition process is used, then process simplicity is maintained, but plug formation completeness and consistency are insufficient
Solution Approach 1:
The deposition process is segmented into multiple sequential deposition steps using different deposition techniques. This allows each deposition step to target specific requirements (e.g., conformal coverage, etch resistance, planarization), achieving superior plug formation consistency while maintaining reasonable process complexity through systematic division of functions.
Solution Approach 2:
The patent changes deposition parameters including material composition, deposition temperature, and deposition technique between different plug portions. These parameter variations enable optimization of each plug segment for its specific function, improving overall plug formation completeness and consistency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the consistency and completeness of plug formations, reducing defects like gaps or voids, and maintains the integrity of features in tone inversion patterning, particularly beneficial for advanced node semiconductor processing.
Implementation Method 1
depositing a first plug layer in the patterned recess using a first deposition process... an atomic layer deposition (ALD) component configured to deposit a first plug layer in the patterned recess using an ALD process
Implementation Method 2
depositing a second plug layer in the patterned recess using a second deposition process... a spin-on deposition component configured to deposit a second plug layer in the patterned recess using a spin-on deposition process
Data Source
AI summary
Double plug methods for tone inversion patterning are described. In an embodiment, a method may include receiving the substrate having a multi-line layer formed thereon. Such a method may also include forming a patterned recess in the multi-line layer, the recess defining an inversion pattern on the substrate. The methods may also include depositing a first plug layer in the patterned recess using a first deposition process. Additionally, the methods may include depositing a second plug layer in the patterned recess using a second deposition process, the second deposition process being different from the first deposition process.