Double-Sided Bridge Die Layout for Higher-Bandwidth Chiplets
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Solution Overview
Problem
Existing semiconductor devices face limitations in achieving tighter pitches and higher bandwidths due to constraints in bridge die technology, necessitating a more advanced semiconductor device and manufacturing method.
Innovation Solution
The development of a semiconductor device with a double-sided bridge die, where conductive traces are present on both sides of the bridge die, allowing for reduced pitch and increased bandwidth through dual-sided interconnects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional single-sided bridge die is used, then manufacturing process is simpler, but the number of conductive signal paths is limited and pitch cannot be reduced further
Solution Approach 1:
The patent transitions from single-sided to double-sided bridge die configuration, utilizing both sides of the bridge die substrate to create conductive signal paths. This dimensional expansion effectively doubles the number of available signal paths without increasing the physical footprint, thereby resolving the contradiction between productivity and device complexity.
2Productivity
If bridge die pitch is reduced to increase bandwidth, then bandwidth improves, but manufacturing complexity and cost increase
Solution Approach 1:
By utilizing the second side of the bridge die substrate, the patent effectively doubles the signal paths available for data transmission. This allows bandwidth to be increased without reducing the pitch between bridge die, thereby maintaining ease of manufacture while improving productivity.
3Ease of manufacture
If double-sided bridge die is implemented, then manufacturing complexity is reduced and cost decreases, but the number of conductive signal paths must be doubled
Solution Approach 1:
The patent naturally doubles the number of conductive signal paths by utilizing both sides of the bridge die substrate. This approach achieves the increased signal path count as a direct result of the structural configuration rather than through complex manufacturing processes, thereby reducing manufacturing complexity while simultaneously increasing productivity.
Data Source
AI summary
A semiconductor device has a double-sided bridge die. The bridge die has a first contact pad on a first surface of the bridge die and a second contact pad on a second surface of the bridge die opposite the first surface. The bridge die is disposed over a carrier. A first conductive layer is formed on the carrier. A first insulating layer is formed over the first conductive layer and bridge die. An opening is formed through the first insulating layer to expose the first conductive layer. A second conductive layer is formed over the first insulating layer. The second conductive layer electrically couples the first conductive layer to the first contact pad of the bridge die. The carrier is removed. A first semiconductor die is electrically coupled to the first conductive layer and the second contact pad of the bridge die.