Double-Sided DBC Substrates for Power Semiconductor Thermal Management
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Solution Overview
Problem
Current semiconductor packages using direct bonded copper (DBC) substrates face challenges in efficiently dissipating heat and reliably connecting electrical contacts, particularly in power semiconductor devices, where existing solutions often rely on wirebonds that can introduce failure modes and limited thermal management.
Innovation Solution
The implementation of power semiconductor packages using double-sided DBC substrates with silver sintering paste for bonding dies to connection traces, eliminating wirebonds and enhancing thermal management by sandwiching a ceramic plate between copper layers, and filling cavities with encapsulating compounds like silicone gel for protection and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional DBC substrates are used with single-sided copper layers, then manufacturing is simplified, but thermal management deteriorates due to limited heat dissipation paths
Solution Approach 1:
The patent transitions from single-sided copper bonding to double-sided copper bonding on DBC substrates. By adding copper layers to both sides of the ceramic substrate, the invention creates three-dimensional heat dissipation paths that conduct heat away from the die in multiple directions, significantly improving thermal management while maintaining manufacturing feasibility.
Solution Approach 2:
The patent uses composite DBC (Direct Bonded Copper) substrates consisting of copper layers bonded to ceramic substrates. This composite structure combines the high thermal conductivity of copper with the high temperature stability and electrical insulation properties of ceramic, enabling effective thermal management while maintaining electrical isolation between opposing copper layers.
2Temperature
If silver sintering paste is used for bonding, then thermal performance improves through enhanced heat transfer, but manufacturing complexity increases due to additional sintering process steps
Solution Approach 1:
The patent employs silver sintering paste that undergoes phase changes during controlled sintering processes. The paste transitions from a printable paste state through drying and sintering stages, ultimately forming a metallurgical bond between copper layers. This parameter-based process control enables thermal enhancement while managing manufacturing complexity through standardized process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves thermal performance and reliability by eliminating wirebond failure modes, enhancing heat transfer, and providing robust electrical connections, suitable for high-power applications like automotive systems.
Implementation Method 1
coupling a first face of each die with one of a plurality of connection traces of a first face of a first direct bonded copper (DBC) substrate using sintering paste
Implementation Method 2
enhancing heat transfer
Implementation Method 3
filling cavities with encapsulating compounds like silicone gel for protection and heat dissipation
Data Source
AI summary
A power semiconductor package includes a first direct bonded copper (DBC) substrate having a plurality of connection traces on a first face of the first DBC substrate. A plurality of die are coupled to the connection traces, each die coupled to one of the connection traces at a first face of the die. A second DBC substrate includes connection traces on a first face of the second DBC substrate. A second face of each die is coupled to one of the connection traces of the first face of the second DBC substrate. A cavity between the first face of the first DBC substrate and the first face of the second DBC substrate is filled with an encapsulating compound. Terminal pins may be coupled to connection traces on the first face of the first DBC substrate. More than two DBC substrates may be stacked to form a stacked power semiconductor package.