Double-Sided Electrode Patterning via Chemical Etching
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Solution Overview
Problem
The existing manufacturing processes for double-sided touch sensing electrodes using nanowires are complex, costly, and prone to defects due to high-energy laser patterning, which affects edge precision and optical properties, and require additional cleaning steps for residual etching solutions, leading to low yield and display quality issues.
Innovation Solution
A double-sided lithography process is employed, using photo-sensitive layers on both sides of a substrate with specific light sources and additives to pattern metal nanowire layers simultaneously, eliminating the need for etching solutions and simplifying the process, while maintaining high manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If laser patterning is used to pattern metal oxide thin film, then electrical conductivity is improved, but manufacturing cost increases and manufacturing complexity increases
Solution Approach 1:
The patent replaces the mechanical laser patterning process with a chemical etching process using etching solution. The etching solution selectively removes metal oxide material based on photoresist patterns, eliminating the need for high-energy laser processing. This substitution reduces manufacturing complexity and cost while maintaining the electrical conductivity function through the underlying metal nanowire layer.
Solution Approach 2:
The patent changes the processing parameters from high-energy laser parameters to chemical etching parameters. Instead of using laser power, focus, and scanning speed, the process uses etching solution concentration, exposure time, and temperature. This parameter change enables simpler manufacturing while achieving the same patterning function.
2Productivity
If high-energy laser is used for patterning, then patterning speed is improved, but manufacturing precision deteriorates due to heating effect
Solution Approach 1:
The patent replaces the thermal laser patterning mechanism with a chemical etching mechanism. The etching solution reacts chemically with the metal oxide at room or controlled temperature, eliminating the heating effect that causes edge precision deterioration. The patterning speed is maintained through optimized etching solution formulation and process parameters.
Solution Approach 2:
The patent changes the temperature parameter from high-temperature laser processing to low-temperature chemical etching. This parameter change eliminates thermal damage and heating effects while maintaining productive patterning speed through controlled chemical reaction rates.
3Device complexity
If etching solution is used for patterning, then manufacturing complexity is reduced, but harmful factors increase due to strong acid reaction with metal wires
Solution Approach 1:
The patent changes the chemical composition parameters of the etching solution to reduce aggressiveness. Instead of using strong acids that react with metal wires, the patent uses milder etching solutions with optimized pH and composition that selectively etch metal oxide without damaging the underlying metal nanowires. This parameter change reduces harmful corrosion effects while maintaining the simplified manufacturing process.
Solution Approach 2:
The patent applies selective protection to different areas: the metal nanowire layer is protected by its material properties and process timing, while the metal oxide layer is exposed to etching. This local quality approach ensures that the etching solution affects only the intended metal oxide material without damaging the metal wires.
4Manufacturing precision
If block layer is added between nanowire layer and substrate, then manufacturing precision is improved by preventing laser damage, but optical properties deteriorate
Solution Approach 1:
The patent extracts and eliminates the block layer from the structure by replacing laser patterning with chemical etching. Since the etching process does not require high-energy laser processing, the protective block layer becomes unnecessary. This extraction removes the optical obstruction while maintaining manufacturing precision through the controlled chemical etching process.
Solution Approach 2:
The patent replaces the laser-based mechanical patterning system with a chemical etching system. This substitution eliminates the need for the block layer that was required to protect against laser damage, thereby restoring optimal light transmission properties while maintaining patterning precision through chemical control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing complexity, minimizes defects, and enhances display quality by eliminating residual etching solutions and improving edge precision, resulting in higher yield and better product performance.
Implementation Method 1
the first photo-sensitive layer and the second photo-sensitive layer are made of photoresists with the same photo sensitivity or with different photo sensitivities
Implementation Method 2
performing an exposure process to define a removing area and a remaining area on the first photo-sensitive layer and a removing area and a remaining area on the second photo-sensitive layer
Data Source
AI summary
A patterning process for forming a double-sided electrode structure includes: providing a substrate having two opposite surfaces, wherein a first photo-sensitive layer and a second photo-sensitive layer are respectively formed on the opposite surfaces; forming a first metal nanowire layer on the first photo-sensitive layer and a second metal nanowire layer on the second photo-sensitive layer; and performing a double-sided lithography process. The lithography process includes: performing an exposure process to define a removing area and a remaining area on both of the first and the second photo-sensitive layers; and removing the first and second photo-sensitive layers and the first and second metal nanowire layers in the defined removing areas by a developer solution, thereby patterning the first and second metal nanowire layers.