Double-Sided Heat Dissipation Module With Metal Bump Alignment
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Solution Overview
Problem
Double-sided heat dissipation power semiconductor modules face issues such as miss-alignment, flatness problems due to height deviations, adhesion failures between substrates, and low reliability due to component misalignment and material forms.
Innovation Solution
A power semiconductor module design featuring metal bumps of a certain thickness on each side of the die, electrically connecting substrates to electrodes, with epoxy molding compound injection between substrates to maintain distance and improve adhesion, thereby addressing alignment and reliability issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat dissipation is implemented to both sides of the power semiconductor module, then heat dissipation performance is improved, but miss-alignment between components occurs
Solution Approach 1:
The invention divides the bonding structure into multiple segments: metal bumps are formed separately on each power semiconductor die, then substrates are bonded to these distributed bonding points. This segmentation allows each bonding location to be independently controlled, improving overall alignment precision while maintaining dual-sided heat dissipation capability.
Solution Approach 2:
Metal bumps are formed on the power semiconductor dies before the bonding process. This preliminary formation of bonding structures enables precise positioning and alignment to be established in advance, preventing misalignment issues during subsequent assembly steps while enabling effective heat dissipation to both sides.
2Volume of moving object
If components are bonded closely for compact design, then device size is reduced, but height deviation between components causes flatness problems
Solution Approach 1:
The invention applies different structural characteristics to different locations: metal bumps provide localized height control at bonding points, while the epoxy molding compound fills and levels the spaces between components. This local differentiation allows compact overall dimensions while maintaining surface flatness through targeted structural features.
Solution Approach 2:
The epoxy molding compound acts as an intermediary material that fills the spaces between power semiconductor dies and substrates. It compensates for height deviations and creates a flat upper surface, enabling compact module design without sacrificing flatness requirements.
3Strength
If substrates are bonded directly to power semiconductor dies, then bonding strength is improved, but adhesion failure occurs due to height deviation
Solution Approach 1:
The epoxy molding compound is applied beforehand to compensate for potential height deviations between components. This cushioning layer prevents adhesion failure by ensuring uniform bonding surfaces, thereby maintaining both bonding strength and reliability even when component heights vary.
Solution Approach 2:
The epoxy molding compound serves as an intermediary bonding and leveling material between the power semiconductor dies and substrates. It provides both mechanical bonding and surface planarization, ensuring reliable adhesion while accommodating height variations in the stacked configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances alignment, flatness, and adhesion between substrates, improving the reliability and yield of the power semiconductor module by precise control of metal bump thickness and electroless plating processes.
Implementation Method 1
a die structure in which a metal bump having a certain thickness or more is formed on one side of a power semiconductor die
Implementation Method 2
precise control of metal bump thickness and electroless plating processes
Data Source
AI summary
The present disclosure relates to a technology relating to a power semiconductor module of which heat is dissipated through both sides thereof and provides a technology for maintaining a distance between an upper substrate and a lower substrate by a metal bump formed on one side of a power semiconductor die.