Double-Sided Interconnect Heat Dispersion Layers for 3D IC Thermal Control
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Solution Overview
Problem
The challenge in the semiconductor industry is the accumulation of heat during the manufacturing and operation of three-dimensional (3D) integrated circuits (ICs), which leads to device malfunction, performance degradation, and peeling between layers due to high processing temperatures and high power semiconductor devices, making effective thermal management crucial.
Innovation Solution
The implementation of a 3D IC structure with a plurality of heat dispersion layers, including high-temperature and low-temperature heat dispersion layers, deposited at specific processing temperatures to facilitate heat dispersion across the device layer and interconnect structures, preventing heat accumulation and damage to semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat dispersion layers are added to manage thermal energy, then thermal management effectiveness is improved, but device structure complexity increases
Solution Approach 1:
The heat dispersion solution is segmented into multiple distinct layers: a first heat dispersion layer deposited on the device layer, and a second heat dispersion layer deposited on the interconnect dielectric structure. This segmentation allows each layer to independently manage heat from different sources and locations, improving overall thermal management effectiveness while maintaining clear functional separation.
Solution Approach 2:
The patent transitions from conventional two-dimensional planar heat management to three-dimensional vertical heat dispersion by stacking heat dispersion layers at different heights and locations. The first heat dispersion layer is positioned at the device layer level while the second layer is positioned at the interconnect level, creating a multi-level thermal management architecture that addresses heat dissipation in the vertical dimension.
2Reliability
If multiple heat dispersion layers are deposited, then heat accumulation is reduced, but manufacturing process complexity increases
Solution Approach 1:
The first heat dispersion layer is deposited preliminarily on the device layer before final device assembly and operation. This preliminary placement ensures that heat dispersion capability is built into the structure during manufacturing, preventing heat accumulation issues before they can affect device performance or reliability during operation.
Solution Approach 2:
The patent employs different deposition parameters for the two heat dispersion layers, including different deposition temperatures and material compositions. The first layer uses parameters optimized for adhesion to the device layer, while the second layer uses parameters optimized for integration with the interconnect dielectric structure, allowing each layer to be manufactured with optimal characteristics for its specific function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively mitigates heat accumulation, preventing device malfunction and performance degradation, thereby increasing the endurance and stability of 3D ICs by dispersing heat away from semiconductor devices and interconnect structures.
Implementation Method 1
heat dispersion layers... facilitate heat dispersion across the device layer and interconnect structures
Data Source
AI summary
Various embodiments of the present disclosure are directed towards an integrated chip including a device layer including a first surface opposite a second surface. A first thermal dispersion layer overlies the device layer. A second thermal dispersion layer underlies the device layer. A first thermal conductivity of the first thermal dispersion layer is different from a second thermal conductivity of the second thermal dispersion layer.