Double-Sided Local Interconnect for High-Density PoP Packaging
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and communication bandwidth between integrated circuit dies while maintaining low contact resistance and high reliability, particularly in Package-on-Package (PoP) technology.
Innovation Solution
The implementation of a double-sided local interconnect component embedded in a redistribution structure, which provides electrical connections between integrated circuit dies without the need for an interposer, thereby reducing warpage mismatch and enhancing signal and power integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If Package-on-Package (PoP) technology is used to increase integration density, then component density and functionality are enhanced, but warpage mismatch and contact resistance increase
Solution Approach 1:
The patent introduces a redistribution structure as an intermediary component between the first and second semiconductor packages. This redistribution structure includes conductive vias and metallization layers that facilitate electrical connection while accommodating dimensional mismatches, thereby reducing warpage issues and contact resistance in PoP configurations
Solution Approach 2:
The patent divides the interconnection system into separate functional components: the first semiconductor package, the redistribution structure, and the second semiconductor package. This segmentation allows each component to be optimized independently, with the redistribution structure specifically designed to handle warpage and alignment tolerances
2Reliability
If conventional interposer structures are used to connect integrated circuit dies, then electrical connections are established, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The redistribution structure serves multiple functions simultaneously: it provides electrical interconnection between dies, enables signal routing, accommodates thermal expansion differences, and provides mechanical support. This multi-functionality eliminates the need for separate interposer components, reducing overall device complexity
Solution Approach 2:
The patent merges the interconnection function with the existing redistribution structure that is already part of the semiconductor package fabrication process. By integrating the interconnect functionality into the redistribution structure rather than adding a separate interposer, the patent simplifies the overall device architecture
3Quantity of substance
If minimum feature size is reduced to increase integration density, then more components are integrated into a given area, but manufacturing precision requirements increase
Solution Approach 1:
The patent addresses the limitations of scaling in the lateral dimension by utilizing the vertical dimension through stacked Package-on-Package configuration. The redistribution structure enables three-dimensional interconnection, allowing integration density to increase without proportionally reducing minimum feature size in the planar direction
Data Source
AI summary
A semiconductor structure includes a first redistribution structure, a first local interconnect component disposed on the first redistribution structure, and a first interconnect structure over a second side of the first local interconnect component. The first local interconnect component includes a first plurality of redistribution layers. The first plurality of redistribution layers includes a first plurality of conductive features on a first side of the first local interconnect component. Each of the first plurality of conductive features are coupled to respective conductive features of the first redistribution structure. The first interconnect structure includes a second plurality of conductive features and a third plurality of conductive features. The second plurality of conductive features are electrically coupled to the third plurality of conductive features through the first local interconnect component.