Double-Sided Semiconductor Package Bonding to Prevent Re-Meltdown
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Solution Overview
Problem
Existing semiconductor packages face issues of re-meltdown and crack generation in bonding members due to thermal expansion differences and varying hardening temperatures during sequential bonding processes, leading to reliability problems.
Innovation Solution
A double-sided heat dissipation semiconductor package design where bonding members have distinct bonding temperatures and materials, with specific materials like solder and adhesives containing Ag or Cu, and a manufacturing method that alternates bonding processes to maintain consistent bonding properties and prevent re-meltdown or crack formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sequential bonding processes are performed with different bonding temperatures, then bonding reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The bonding process is divided into multiple sequential stages, each with distinct bonding temperatures and materials. First bonding members use a first bonding temperature, while second bonding members use a second bonding temperature different from the first. This segmentation allows optimization of each bonding stage independently, improving overall reliability while managing complexity through structured process division.
Solution Approach 2:
The patent changes bonding parameters (temperature and material composition) between different bonding stages. By adjusting the bonding temperature and selecting appropriate bonding materials for each stage, the process prevents re-meltdown and crack generation, thereby improving bonding reliability while accommodating the increased manufacturing complexity through controlled parameter variation.
2Strength
If high bonding temperature is used, then bonding strength is improved, but re-meltdown of previous bonding members occurs
Solution Approach 1:
The patent applies preliminary action by performing bonding processes in a specific sequence where first bonding members are bonded at a first temperature before second bonding members are bonded at a second temperature. This preliminary bonding at controlled temperatures prevents re-meltdown of existing bonds while achieving the required bonding strength, thereby maintaining bonding integrity.
Solution Approach 2:
Different bonding temperatures are applied at different stages: a first bonding temperature for first bonding members and a second bonding temperature for second bonding members. This parameter change strategy ensures that high temperatures are not applied to already-bonded members, preventing re-meltdown while achieving adequate bonding strength for each stage.
3Manufacturing precision
If different bonding materials are used for different bonding members, then bonding quality is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by selecting specific bonding materials for specific bonding members based on their functional requirements and position in the assembly. First bonding members use materials suitable for their bonding conditions, while second bonding members use different materials optimized for their specific requirements. This localized material selection improves bonding quality while managing complexity through purpose-driven material differentiation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses re-meltdown and crack generation, enhancing the reliability and quality of the semiconductor package by ensuring consistent bonding across different stages of the manufacturing process.
Implementation Method 1
cracks may be generated in the first bonding members 12 or the second bonding members 16 due to each different Coefficient of Thermal Expansion (CTE) between the substrates 11A and 11B, the conductors 17, the first bonding members 12, and the second bonding members 16
Implementation Method 2
The semiconductor chips are bonded on a pad of the lead frame and a plating layer formed of Ag is interposed between the semiconductor chip and the lead frame so that a lead of the lead frame is electrically connected to a pad of the semiconductor chip by using a bonding wire which is a signal line
Data Source
AI summary
The present invention relates to a double-sided heat dissipation semiconductor package and a method of manufacturing the same, and more particularly, to a double-sided heat dissipation semiconductor package and a method of manufacturing the same in which re-meltdown or generation of cracks in bonding members during sequential bonding processes may be suppressed to increase its quality.