Double-Sided Liquid-Cooled Power Module for Warpage-Stable Heat Dissipation

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Solution Overview

Problem

Conventional single-sided cooling ceramic substrates for high-power battery modules are inadequate for heat dissipation, leading to irregular warpage and deformation, which affects the stability and efficiency of power semiconductor devices, and the use of nano-silver paste for bonding results in inferior electrical and thermal conductivity.

Innovation Solution

A double-sided liquid-cooling power module with a silver thin film bonding structure and copper saddle-shaped guide columns for efficient heat and electricity conduction, combined with shunt support columns for mechanical compensation, ensuring secure bonding and reduced warpage-induced stress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a conventional single-sided cooling ceramic substrate is used, then the structure is simple, but the heat dissipation performance is insufficient

Engineering Contradiction:
Improveheat dissipation performanceVSAvoidsubstrate structure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent transitions from single-sided cooling to double-sided cooling architecture, adding a second cooling surface to the ceramic substrate. This dimensional change allows heat to be dissipated from both the top and bottom surfaces of the power semiconductor devices, effectively doubling the heat dissipation area and improving thermal management without proportionally increasing structural complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If nano-silver paste is used for bonding, then the bonding process is simple, but the electrical and thermal conductivity are inferior

Engineering Contradiction:
Improveelectrical and thermal conductivityVSAvoidbonding process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter from nano-silver paste to silver thin film, which has superior electrical and thermal conductivity. The silver thin film is deposited on the ceramic substrate using physical vapor deposition (PVD) or chemical vapor deposition (CVD) techniques, transforming the bonding interface from a paste-based connection to a metallic film-based connection that provides lower resistance and better thermal coupling.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical bonding process (paste application and reflow) with a physical deposition process. The silver thin film is deposited directly onto the substrate surface, creating a more reliable electrical and thermal connection without requiring high-temperature reflow processing, thus substituting a mechanical/chemical bonding system with a physical deposition system.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Temperature

If the ceramic substrate size is increased, then the thermal conductivity is improved, but warpage and deformation occur

Engineering Contradiction:
Improvethermal conductivityVSAvoidsubstrate flatness
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating a silver thin film layer specifically at the bonding interface between the power semiconductor device and the ceramic substrate. This localized metallic layer provides high thermal and electrical conductivity exactly where needed (at the heat generation and transfer interface) without requiring the entire substrate to be made of high-conductivity material, thus improving thermal performance without proportionally increasing substrate size and associated warpage risks.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances heat dissipation performance and electrical conductivity while preventing damage to power semiconductor devices by minimizing warpage-induced stress and providing a reliable, efficient thermal path for heat removal.

Implementation Method 1

uses a silver thin film as a bonding structure between the bottom surface electrode of a power semiconductor device and a mounting pad to significantly improve efficiencies of heat conducting and electricity conducting from the bottom side of a power semiconductor

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

uses copper saddle-shaped upper guide columns to effectively conduct, from an upper ceramic substrate to an upper thermal conductive housing portion, heat energy generated at the top side of a power semiconductor device

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

a watertight housing, the watertight housing comprising an upper thermally conductive housing portion and a lower thermally conductive housing portion, at least one cooling liquid channel being formed in the upper thermally conductive housing portion and in the lower thermally conductive housing portion, respectively

Methodology Applied
Scientific EffectConvection: Convection

Data Source

PatentUS20260068672A1Doubled-Sided Liquid-Cooling Power Module Mounted with a Plurality of Power Semiconductor Devices
Publication Date: 2026.03.05 DIODSENT GREEN TECHNOLOGY CO LTD
  • US20260068672A1 patent drawing
  • US20260068672A1 patent drawing
  • US20260068672A1 patent drawing

AI summary

A double-sided liquid-cooling power module mounted with a plurality of power semiconductor devices, including a watertight housing and a power device package, the power device package including a lower ceramic substrate, a power semiconductor device, a copper saddle-shaped upper guide column, an upper ceramic substrate, a shunt support column, and a resin dielectric package, a bottom surface electrode of the power semiconductor device being correspondingly press-bonded with a silver thin film layer, a top surface electrode being press-bonded with an interfacial silver thin film layer; the power semiconductor device is encapsulated by the resin dielectric package; an electrical conduction loop is formed by press-bonding the power semiconductor device to the lower ceramic substrate via the silver thin film layer and press-bonding the copper saddle-shaped upper column to the power semiconductor device via the silver thin film layer; a double-sided heat dissipation effect is achieved with the watertight housing.