Double-Sided Power Module Package for Compact Heat Dissipation
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Solution Overview
Problem
There is a demand for a power module semiconductor package that can be miniaturized to accommodate the reduction in size and weight of equipment with semiconductor apparatuses, while ensuring effective heat dissipation.
Innovation Solution
The power module semiconductor package comprises a substrate with a first and second major surface, where the first power semiconductor device is mounted on the first major surface and the second power semiconductor device is mounted on the second major surface. The devices are electrically connected via a via penetrating the substrate, and the external main terminals and signal terminals protrude from the sealing resin, allowing for a non-overlapping region that facilitates miniaturization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional transfer molded semiconductor package structure is used with heat spreader and heat sink, then heat dissipation is ensured, but the package size and weight are large
Solution Approach 1:
The patent combines the heat spreader and substrate into a single integrated structure where the substrate serves as the heat spreader. This merging eliminates the need for a separate heat spreader component while maintaining thermal conduction functionality, thereby reducing overall package weight and size while ensuring effective heat dissipation from the power semiconductor devices.
Solution Approach 2:
The substrate is designed to perform multiple functions simultaneously: it serves as both the mechanical mounting platform for the power semiconductor devices and as the heat spreader for thermal management. This multi-functionality reduces the total component count and package weight while maintaining effective heat dissipation capabilities.
2Volume of moving object
If power semiconductor devices are mounted on both sides of substrate to reduce size, then miniaturization is achieved, but electrical connection complexity increases
Solution Approach 1:
The patent utilizes both sides of the substrate for mounting power semiconductor devices, effectively using the third dimension (z-axis) to reduce the footprint area. By arranging devices on opposite faces of the substrate and using vias for vertical electrical connections, the design achieves miniaturization while managing connection complexity through three-dimensional routing.
Solution Approach 2:
The electrical connection system is segmented into distinct functional paths: vias provide vertical connections through the substrate, bonding wires connect to external terminals on one side, and lead frames provide external connections. This segmentation of connection functions simplifies the overall design by assigning specific connection tasks to different structural elements.
3Volume of moving object
If power semiconductor devices are mounted on both sides of substrate, then miniaturization is achieved, but manufacturing difficulty increases
Solution Approach 1:
The substrate is prepared in advance with pre-formed vias and conductive patterns before the power semiconductor devices are mounted. This preliminary preparation of the substrate's electrical connection structure simplifies the subsequent assembly process, as the connection paths are already established and devices can be directly mounted and connected without complex in-situ routing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves a reduction in size and weight of the power module semiconductor package, while maintaining effective heat dissipation through the use of a heat spreader and heat sink, thus enabling the miniaturization of semiconductor apparatuses.
Implementation Method 1
The first power semiconductor device and the second power semiconductor device are electrically connected to each other via a via penetrating the substrate
Implementation Method 2
The heat spreader and the heat sink are joined together by a heat-dissipative and insulating layer
Data Source
AI summary
A power module semiconductor package comprises a substrate, a first power semiconductor device, a second power semiconductor device, a heat spreader, a sealing resin, and the like. In a plan view seen from a second major surface of the substrate, the first power semiconductor device includes a region that does not overlap with the second power semiconductor device and the substrate. The non-overlapping region is located at a substrate opening of the substrate. A first signal electrode of the first power semiconductor device and a first signal terminal are electrically connected to each other by a first bonding wire through the substrate opening.