Double-Sided Semiconductor Device Interconnect Structures
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Solution Overview
Problem
Current semiconductor devices are limited by the active region being formed on only one side of the substrate, restricting the number of devices that can be placed on a die and reducing interconnect routing options, particularly in multi-functional devices like memory and application-specific integrated circuits (ASICs).
Innovation Solution
A method of manufacturing semiconductor devices with double-sided interconnect structures, where active devices are formed on both sides of the substrate, with insulating and conductive layers, and interconnect structures are formed over these layers to enable electrical connectivity between the active devices on both sides.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the active region is formed on only one side of the substrate, then the manufacturing process is simpler, but the number of devices that can be placed on the die and interconnect routing options are limited
Solution Approach 1:
The patent transitions from a single-sided active region configuration to a double-sided configuration, utilizing both sides of the substrate to form active regions. This dimensional change from one side to two sides of the substrate enables increased interconnect routing options and device density while maintaining manufacturing feasibility through systematic process steps including forming first and second active regions on opposite sides, creating through-substrate vias, and establishing interconnect structures on both surfaces.
2Ease of manufacture
If the active region is formed on only one side of the substrate, then the manufacturing process is simpler, but the number of devices per die is reduced
Solution Approach 1:
The patent utilizes both sides of the substrate to form active regions, effectively doubling the available area for device placement. By creating first active regions on a first side and second active regions on a second side, the system increases device density and productivity while maintaining a systematic manufacturing approach that includes forming insulating layers, conductive layers, and through-substrate vias to interconnect the double-sided structures.
3Productivity
If double-sided interconnect structures are formed, then circuit density and interconnect capability increase, but the manufacturing process becomes more complex
Solution Approach 1:
The patent divides the manufacturing process into distinct segments: forming first active regions and first interconnect structures on a first side, forming second active regions and second interconnect structures on a second side, and creating through-substrate vias to interconnect them. This segmentation allows each side to be processed independently with standardized steps, reducing overall process complexity despite the increased circuit density achieved through double-sided configuration.
Solution Approach 2:
The patent implements double-sided active regions and interconnect structures, utilizing both surfaces of the substrate to maximize circuit density. By forming first and second insulating layers, first and second conductive layers, and through-substrate vias, the system achieves high circuit density while organizing the manufacturing process into systematic steps that manage the complexity of the three-dimensional interconnect architecture.
Data Source
AI summary
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect structure is formed over the first insulating layer and first conductive layer. A temporary carrier is mounted to the first interconnect structure. A second active device is formed on a second side of the semiconductor wafer. A second insulating layer is formed over the second side of the wafer. A second conductive layer is formed over the second insulating layer. A second interconnect structure is formed over the second insulating layer and second conductive layer. The temporary carrier is removed, leaving a double-sided semiconductor device. The double-sided semiconductor device is enclosed in a package with the first and second interconnect structures electrically connected.