Double-Sided Semiconductor Substrate Bonding
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Solution Overview
Problem
Conventional semiconductor manufacturing methods for double-sided substrates result in damage due to thermal expansion coefficient differences, leading to increased defect rates and reduced electrical properties and reliability.
Innovation Solution
A method where a semiconductor chip and metal post are initially joined and then bonded to both substrates, minimizing thermal expansion-related damage by using specific bonding processes such as soldering, sintering, or laser bonding with conductive materials like Cu, Ag, and Al, and forming a package housing with terminal leads for electrical connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate bonding of substrate, semiconductor chip, and metal post is performed, then bonding flexibility is maintained, but damage occurs due to thermal expansion coefficient difference
Solution Approach 1:
The semiconductor chip and metal post are bonded together in advance before being bonded to the substrates. This preliminary bonding action ensures that the chip-post assembly is already stabilized, reducing the impact of subsequent thermal expansion differences during substrate bonding operations.
Solution Approach 2:
The semiconductor chip and metal post are merged into a single bonded unit before substrate attachment. This combining reduces the number of separate bonding interfaces exposed to thermal stress, thereby minimizing damage from thermal expansion coefficient differences between dissimilar materials.
2Ease of manufacture
If multiple separate bonding operations are performed, then connection flexibility is maintained, but process complexity and difficulty increase
Solution Approach 1:
The semiconductor chip and metal post are bonded together in advance before being bonded to the substrates. This preliminary bonding action ensures that the chip-post assembly is already stabilized, reducing the impact of subsequent thermal expansion differences during substrate bonding operations.
Solution Approach 2:
The semiconductor chip and metal post are merged into a single bonded unit before substrate attachment. This combining reduces the number of separate bonding interfaces exposed to thermal stress, thereby minimizing damage from thermal expansion coefficient differences.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces defect rates and enhances the electrical properties and reliability of semiconductor chips by minimizing thermal expansion-related damage and simplifying the bonding process.
Implementation Method 1
bonding the semiconductor chip and the metal post using soldering or sintering
Implementation Method 2
bonding the semiconductor chip and the metal post using soldering or sintering
Implementation Method 3
the semiconductor chip and the lower metal insulating substrate are bonded to each other using adhesives interposed therebetween
Data Source
AI summary
Provided is a method of manufacturing a semiconductor having a double-sided substrate including preparing a first substrate on which a specific pattern is formed to enable electrical connection, preparing at least one semiconductor chip bonded to a metal post, bonding the at least one semiconductor chip to the first substrate, bonding a second substrate to the metal post, forming a package housing by packaging the first substrate and the second substrate to expose a lead frame, and forming terminal leads toward the outside of the package housing. Accordingly, the semiconductor chip and the metal post are previously joined to each other and are respectively bonded to the first substrate and the second substrate so that damage generated while bonding the semiconductor chip may be minimized and electrical properties and reliability of the semiconductor chip may be improved.