Double-Sided Deep Trench Capacitor Structure for Higher Capacitance
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Solution Overview
Problem
Existing capacitor structures face challenges in achieving high capacitance without risking current leakage or dielectric breakdown due to excessively deep trenches, which complicate the formation of insulating and conductive layers.
Innovation Solution
A capacitor structure with double-sided deep trench capacitors, featuring first and second capacitors on opposite sides of a substrate, allowing for increased surface area and capacitance without deep trenches, using a 'MIMIM' structure with insulating and conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the depth of trenches for capacitor is increased to achieve higher capacitance, then the capacitance increases, but the insulating and conductive layers cannot be properly formed and current leakage or dielectric breakdown occurs
Solution Approach 1:
The patent transitions from single-sided deep trench capacitors to double-sided deep trench capacitors, utilizing both the front surface and back surface of the substrate. This dimensional change allows capacitance to be doubled without increasing trench depth, thereby avoiding the formation problems and reliability issues associated with excessively deep trenches while still achieving the goal of higher capacitance
2Quantity of substance
If the depth of trenches for capacitor is increased to achieve higher capacitance, then the capacitance increases, but the manufacturing process becomes more complex
Solution Approach 1:
The capacitor structure is segmented into two separate sides: front surface capacitors and back surface capacitors. Each side has its own independent trenches and capacitor structures. This segmentation allows each trench to maintain a manageable depth that is easier to manufacture, while the combined capacitance from both sides achieves the desired high capacitance value
Solution Approach 2:
By utilizing the back surface of the substrate in addition to the front surface, the patent effectively doubles the available capacitor area without increasing trench depth. This dimensional expansion provides more capacitance with simpler manufacturing processes for each individual trench
Data Source
AI summary
A capacitor structure comprises a substrate having a first side and a second side opposite to the first side; a plurality of first trenches formed on the first side of the substrate; a plurality of second trenches formed on the second side of the substrate; a first capacitor extending along the first side and into the first trenches; and a second capacitor extending along the second side and into the second trenches, wherein a first depth of each of the first trenches or a second depth of each of the second trenches is greater than half of a thickness of the substrate.