Double-Sided Deep-Trench Capacitors for High Density With Lower ESL
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Solution Overview
Problem
Conventional semiconductor technologies face challenges in balancing capacitance density with equivalent series inductance (ESL) and equivalent series resistance (ESR) as they increase the depth or length of deep-trench-capacitors (DTCs), leading to unwanted parasitic effects.
Innovation Solution
Incorporating multiple DTCs on opposite sides of a semiconductor device layer, reducing the aspect ratio of trenches to ease processing and maintain or reduce ESL and ESR, while increasing capacitance density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the depth of deep-trench-capacitors is increased to increase capacitance density, then capacitance density is improved, but equivalent series inductance and equivalent series resistance increase
Solution Approach 1:
The patent transitions from a single-sided deep-trench-capacitor configuration to a double-sided configuration, utilizing the third dimension (depth from both sides of the substrate) to increase capacitance density without increasing the aspect ratio of individual trenches. This dimensional change allows capacitance to be accumulated from both the top and bottom surfaces of the substrate simultaneously.
Solution Approach 2:
The patent divides the capacitance formation into two separate but symmetric components: a first deep-trench-capacitor on the first surface of the substrate and a second deep-trench-capacitor on the second surface. This segmentation allows each capacitor to maintain optimized, lower aspect ratios while the combined structure achieves high overall capacitance density.
2Quantity of substance
If the aspect ratio of trenches is increased to increase capacitance, then capacitance is improved, but processing difficulty increases
Solution Approach 1:
By utilizing both surfaces of the substrate, the patent effectively distributes the capacitance requirement across two separate trench structures. This allows each individual trench to have a reduced aspect ratio (e.g., 10:1 or 15:1) compared to a single-sided design, making the etching and filling processes more manageable and reliable.
3Quantity of substance
If the depth of trenches is increased to increase capacitance density, then capacitance density is improved, but equivalent series resistance increases
Solution Approach 1:
The patent segments the total capacitance into two separate capacitors on opposite sides of the substrate. Each capacitor has optimized dimensions that minimize resistive losses, and the symmetric configuration ensures balanced current distribution, reducing overall equivalent series resistance while maintaining high capacitance density.
Data Source
AI summary
Exemplary semiconductor structures may include a substrate defining a device layer. The structures may include a first deep-trench-capacitor (DTC) coupled to a first surface of the substrate. The structures may include a second DTC coupled to a second surface of the substrate opposite the first surface of the substrate.